APT80GA

APT80GA60B vs APT80GA90B vs APT80GA60LD40

 
PartNumberAPT80GA60BAPT80GA90BAPT80GA60LD40
DescriptionIGBT Transistors FG, IGBT, 600V, TO-247IGBT Transistors FG, IGBT, 900V, TO-247IGBT Transistors FG, IGBT-COMBI, 600V, TO-264
ManufacturerMicrochipMicrochipMicrochip
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-247-3TO-247-3TO-264-3
Mounting StyleThrough HoleThrough HoleSMD/SMT
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max600 V-600 V
Collector Emitter Saturation Voltage2 V-2 V
Maximum Gate Emitter Voltage30 V-30 V
Continuous Collector Current at 25 C143 A-143 A
Pd Power Dissipation625 W-625 W
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
PackagingTubeTubeTube
Continuous Collector Current Ic Max143 A-143 A
Height21.46 mm-5.21 mm
Length16.26 mm-26.49 mm
Operating Temperature Range- 55 C to + 150 C-- 55 C to + 150 C
Width5.31 mm-20.5 mm
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Continuous Collector Current143 A-143 A
Gate Emitter Leakage Current100 nA-100 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity111
SubcategoryIGBTsIGBTsIGBTs
TradenamePOWER MOS 8-POWER MOS 8
Unit Weight1.340411 oz1.340411 oz0.373904 oz
제조사 부분 # 설명 RFQ
Microchip / Microsemi
Microchip / Microsemi
APT80GA60B IGBT Transistors FG, IGBT, 600V, TO-247
APT80GA90B IGBT Transistors FG, IGBT, 900V, TO-247
APT80GA90LD40 IGBT Transistors FG, IGBT-COMBI, 900V, TO-264
APT80GA60LD40 IGBT Transistors FG, IGBT-COMBI, 600V, TO-264
APT80GA90B IGBT Transistors
APT80GA60B IGBT Transistors
APT80GA60LD40 IGBT Transistors
APT80GA90LD40 POWER IGBT TRANSISTOR
APT80GA90LD40G 신규 및 오리지널
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