CSD17309Q3

Mfr. #:: CSD17309Q3
설명:: MOSFET 30V N Channel NexFET Power MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CSD17309Q3 데이터 시트
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추가 정보:: CSD17309Q3 추가 정보 CSD17309Q3 Product Details

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: E

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 20 V

Id - 연속 드레인 전류:: 8 A

Rds On - 드레인 소스 저항:: 18 mOhms

Vgs th - 게이트 소스 임계 전압:: 600 mV

Vgs - 게이트 소스 전압:: 4.5 V

Qg - 게이트 차지:: 22 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 3.1 W

구성:: 듀얼

채널 모드:: 상승

상표명:: TrenchFET

포장:: 릴

키:: 1.75 mm

길이:: 4.9 mm

시리즈:: SI9

트랜지스터 유형:: 2 N-Channel

너비:: 3.9 mm

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 45 S

가을 시간:: 12 ns

상품 유형:: MOSFET

상승 시간:: 10 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 35 ns

일반적인 켜기 지연 시간:: 15 ns

부품 번호 별칭:: SI9926CDY-E3

단위 무게:: 0.006596 oz

Tags: CSD1730, CSD173, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17309Q3 설명

***as Instruments: 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm 8-VSON-CLIP -55 to 150

*** Source Electronics: MOSFET N-CH 30V 60A 8SON / Trans MOSFET N-CH 30V 20A 8-Pin VSON-CLIP EP T/R

***nell: MOSFET, N-CH, 30V, 60A, VSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: 8V; Threshold Voltage Vgs: 1.2V; Powe

***th Star Micro: the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.

***(Formerly Allied Electronics): SUD42N03-3M9P-GE3 N-channel MOSFET Transistor; 107 A; 30 V; 3-Pin TO-252AA

***ure Electronics: SUD42N03 Series 30 V 3.9 mOhms SMT N-Channel Power Mosfet - TO-252

***ment14 APAC: MOSFET,N CH,DIODE,30V,42A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3200µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V

***roFlash: Mosfet, Power; N-ch; Vdss 30V; Rds(on) 7.5MILLIOHMS; Id 65A; D-pak (TO-252AA); Pd 75W

***ure Electronics: Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;

***nsix Microsemi: Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

***ark: Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes

***et: Transistor MOSFET N-Channel 25V 75A 3-Pin DPAK

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:75A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):5.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 25V, 75A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0053ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 187W; Transistor Case Style: SOT-428; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 25V; Voltage Vgs Rds on Measurement: 10V

***icroelectronics: N-CHANNEL 30V - 0.008 OHM - 70A D2PAK LOW GATE CHARGE STripFET MOSFET

***et: Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) D2PAK T/R

***SIT Distribution GmbH: Power Field-Effect Transistor, 70A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 30V, 70A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 100W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 70A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 16V; Voltage Vgs Rds on Measurement: 10V

***emi: N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ

***ure Electronics: N-Channel 30 V 55 A 10.5 mO Surface Mount PowerTrench Mosfet - DPAK

***r Electronics: Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:60mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:DPAK; Power Dissipation Pd:60mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.

***AS INSRUMENTS: This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

CSD17309Q3 추가 정보

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

CSD17309Q3 NexFET™ Power MOSFET: The OMO Electronic CSD17309Q3 30 V N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5V gate drive applications. The TI CSD17309Q3 N-Channel NexFET MOSFET features ultra low on-resistance and low thermal resistance and is ideal for notebook point of load and point-of-load synchronous buck in networking, telecom, and computing systems applications.

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

부분 #	설명	재고	가격
CSD17309Q3 DISTI # V98:2334_07248762	Trans MOSFET N-CH 30V 20A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	1	1:$1.0369
CSD17309Q3 DISTI # 296-27250-1-ND	MOSFET N-CH 30V 60A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7156In Stock	1000:$0.5540 500:$0.7018 100:$0.9049 10:$1.1450 1:$1.2900
CSD17309Q3 DISTI # 296-27250-6-ND	MOSFET N-CH 30V 60A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7156In Stock	1000:$0.5540 500:$0.7018 100:$0.9049 10:$1.1450 1:$1.2900
CSD17309Q3 DISTI # 296-27250-2-ND	MOSFET N-CH 30V 60A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	5000:$0.4769 2500:$0.5020
CSD17309Q3 DISTI # CSD17309Q3	Trans MOSFET N-CH 30V 20A 8-Pin SON T/R - Tape and Reel (Alt: CSD17309Q3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4729 5000:$0.4499 10000:$0.4349 15000:$0.4199 25000:$0.4089
CSD17309Q3 DISTI # CSD17309Q3	Trans MOSFET N-CH 30V 20A 8-Pin SON T/R - Tape and Reel (Alt: CSD17309Q3) RoHS: Compliant Min Qty: 2500 Container: Reel	Asia - 0
CSD17309Q3 DISTI # CSD17309Q3	Trans MOSFET N-CH 30V 20A 8-Pin SON T/R (Alt: CSD17309Q3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.6459 5000:€0.5279 10000:€0.4839 15000:€0.4149 25000:€0.3869
CSD17309Q3 DISTI # 71Y7091	MOSFET Transistor, N Channel, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V RoHS Compliant: Yes	2234	1:$1.0700 10:$0.9100 25:$0.8400 50:$0.7710 100:$0.7010 250:$0.6610 500:$0.6200 1000:$0.4890
CSD17309Q3	30V N Channel NexFET&#153,Power MOSFET	895	1000:$0.3700 750:$0.4100 500:$0.5200 250:$0.6400 100:$0.6900 25:$0.8100 10:$0.8700 1:$0.9800
CSD17309Q3 DISTI # 595-CSD17309Q3	MOSFET 30V N Channel NexFET Power MOSFET RoHS: Compliant	0	1:$1.0700 10:$0.9100 100:$0.7010 500:$0.6200 1000:$0.4890 2500:$0.4340 10000:$0.4180
CSD17309Q3 DISTI # 8274830P	MOSFET N-CHANNEL 30V 20A NEXFET SON8, RL	575	50:£0.6640 100:£0.5100
CSD17309Q3	INSTOCK	1357
CSD17309Q3 DISTI # 2501090	MOSFET, N-CH, 30V, 60A, VSON-8 RoHS: Compliant	2254	5:£0.7750 25:£0.6950 100:£0.5350 250:£0.5040 500:£0.4730
CSD17309Q3 DISTI # 2501090	MOSFET, N-CH, 30V, 60A, VSON-8 RoHS: Compliant	2234	1:$1.7000 10:$1.4400 100:$1.1200 500:$0.9810 1000:$0.7740 2500:$0.6870

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CSD17309Q3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes