TGF2929-FL

TGF2929-FL
Mfr. #:
TGF2929-FL
제조사:
Qorvo
설명:
RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
TGF2929-FL 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
추가 정보:
TGF2929-FL 추가 정보
제품 속성
속성 값
제조사
트라이퀸트(Qorvo)
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
유형
RF 전력 MOSFET
포장
쟁반
부분 별칭
1123811
기술
GaN Si
얻다
14 dB
출력 파워
107 W
Pd 전력 손실
144 W
동작 주파수
3.5 GHz
Vgs 게이트 소스 전압
145 V
Id-연속-드레인-전류
12 A
Vds-드레인-소스-고장-전압
28 V
Vgs-th-Gate-Source-Threshold-Voltage
- 2.9 V
트랜지스터 극성
N-채널
Tags
TGF2929-F, TGF292, TGF29, TGF2, TGF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
부분 # 제조 설명 재고 가격
TGF2929-FL
DISTI # 772-TGF2929-FL
QorvoRF MOSFET Transistors DC-3.5GHz 100W 28V GaN
RoHS: Compliant
11
  • 1:$375.0000
영상 부분 # 설명
TGF2929-HM

Mfr.#: TGF2929-HM

OMO.#: OMO-TGF2929-HM

RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
TGF2965-SM

Mfr.#: TGF2965-SM

OMO.#: OMO-TGF2965-SM

RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
TGF2933

Mfr.#: TGF2933

OMO.#: OMO-TGF2933

RF JFET Transistors DC-25GHz 7Watt NF 1.3dB GaN
TGF2941

Mfr.#: TGF2941

OMO.#: OMO-TGF2941

RF JFET Transistors DC-25GHz 4Watt NF 1.3dB GaN
TGF2929-FS

Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2979-SM

Mfr.#: TGF2979-SM

OMO.#: OMO-TGF2979-SM-318

RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
TGF2960

Mfr.#: TGF2960

OMO.#: OMO-TGF2960-1190

신규 및 오리지널
TGF2960-SD.

Mfr.#: TGF2960-SD.

OMO.#: OMO-TGF2960-SD--1190

신규 및 오리지널
TGF2961

Mfr.#: TGF2961

OMO.#: OMO-TGF2961-1190

신규 및 오리지널
TGF2961-SD

Mfr.#: TGF2961-SD

OMO.#: OMO-TGF2961-SD-1190

신규 및 오리지널
유효성
재고:
Available
주문 시:
1500
수량 입력:
TGF2929-FL의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$562.50
US$562.50
10
US$534.38
US$5 343.75
100
US$506.25
US$50 625.00
500
US$478.12
US$239 062.50
1000
US$450.00
US$450 000.00
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