TGF2979-SM

TGF2979-SM
Mfr. #:
TGF2979-SM
제조사:
Qorvo
설명:
RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
TGF2979-SM 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
TGF2979-SM 추가 정보
제품 속성
속성 값
제조사
트라이퀸트(Qorvo)
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
쟁반
부분 별칭
1127378
단위 무게
0.004339 oz
장착 스타일
SMD/SMT
패키지 케이스
QFN-20
기술
GaN SiC
구성
하나의
트랜지스터형
헴트
얻다
11 dB
출력 파워
22 W
Pd 전력 손실
49 W
최대 작동 온도
+ 225 C
동작 주파수
DC to 12 GHz
Id-연속-드레인-전류
1.8 A
Vds-드레인-소스-고장-전압
32 V
트랜지스터 극성
N-채널
개발 키트
TGF2979-SMEVB1
Vgs-Gate-Source-Breakdown-Voltage
- 2.7 V
Tags
TGF297, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 12 GHz, 25 W, 11 dB, 32 V, GaN, Plastic , QFN
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF297x GaN RF Transistor
Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz. The TGF2970 transistors offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at high drain bias operation. Learn More
부분 # 제조 설명 재고 가격
TGF2979-SM
DISTI # 772-TGF2979-SM
QorvoRF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
RoHS: Compliant
95
  • 1:$62.0000
  • 25:$53.6200
  • 100:$46.3800
TGF2979-SM-EVB
DISTI # 772-TGF2979-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
1127378
DISTI # TGF2979-SM
QorvoRF POWER TRANSISTOR
RoHS: Compliant
30
  • 1:$38.2200
영상 부분 # 설명
TGF2934

Mfr.#: TGF2934

OMO.#: OMO-TGF2934

RF JFET Transistors DC-25GHz 14Watt NF 1.5dB GaN
TGF2942

Mfr.#: TGF2942

OMO.#: OMO-TGF2942

RF JFET Transistors DC-25GHz 2Watt NF 1.2dB GaN
TGF2957

Mfr.#: TGF2957

OMO.#: OMO-TGF2957

RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
TGF2955

Mfr.#: TGF2955

OMO.#: OMO-TGF2955

RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
TGF2936

Mfr.#: TGF2936

OMO.#: OMO-TGF2936

RF JFET Transistors DC-25GHz 10Watt NF 1.3dB GaN
TGF2929-FL

Mfr.#: TGF2929-FL

OMO.#: OMO-TGF2929-FL

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2929-FS

Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2953

Mfr.#: TGF2953

OMO.#: OMO-TGF2953-318

RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm
TGF2979-SM-EVB

Mfr.#: TGF2979-SM-EVB

OMO.#: OMO-TGF2979-SM-EVB-1152

RF Development Tools
TGF2961-SD

Mfr.#: TGF2961-SD

OMO.#: OMO-TGF2961-SD-1190

신규 및 오리지널
유효성
재고:
Available
주문 시:
4000
수량 입력:
TGF2979-SM의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$69.57
US$69.57
10
US$66.09
US$660.92
100
US$62.61
US$6 261.30
500
US$59.13
US$29 567.25
1000
US$55.66
US$55 656.00
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