NSS40302PDR2G

Mfr. #:: NSS40302PDR2G
제조사:: ON Semiconductor
설명:: Bipolar Transistors - BJT COMP NPN/PNP LO VCE 40V 6A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NSS40302PDR2G 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NSS40302PDR2G Datasheet NSS40302PDR2G Datasheet (P4-P6)NSS40302PDR2G Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: SOIC-Narrow-8

트랜지스터 극성:: NPN, PNP

구성:: 듀얼

컬렉터-이미터 전압 VCEO 최대:: 40 V

컬렉터-베이스 전압 VCBO:: 40 V

이미터-베이스 전압 VEBO:: 6 V

최대 DC 수집기 전류:: 3 A

이득 대역폭 곱 fT:: 100 MHz

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: NSS40302PD

DC 전류 이득 hFE 최대:: 200 at 10 mA, 2 V

키:: 1.5 mm

길이:: 5 mm

포장:: 릴

너비:: 4 mm

상표:: 온세미컨덕터

DC 수집기/기본 이득 hfe 최소:: 200 at 10 mA, 2 V, 200 at 500 mA, 2 V, 180 at 1 A, 2 V, 180 at 2 A, 2 V

Pd - 전력 손실:: 783 mW

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 2500

하위 카테고리:: 트랜지스터

단위 무게:: 0.005044 oz

Tags: NSS403, NSS40, NSS4, NSS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NSS40302PDR2G 설명

***p One Stop Global: Trans GP BJT NPN/PNP 40V 3A 783mW Automotive 8-Pin SOIC N T/R

***(Formerly Allied Electronics): ON Semi NSS40302PDR2G Dual NPN+PNP Bipolar Transistor, 3 A, 40 V, 8-Pin SOIC | ON Semiconductor NSS40302PDR2G

***enic: 40V 653mW 3A 1 NPN1 PNP SOIC-8 Bipolar Transistors - BJT ROHS

***r Electronics: Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ark: Transistor Array, Npn/pnp, 40V, Soic Rohs Compliant: Yes

***nell: TRANSISTOR ARRAY, NPN/PNP, 40V, SOIC; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 783mW; DC Collector Current: 3A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ponent Stockers USA: 3000 mA 40 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR

***th Star Micro: ON Semiconductors e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

***(Formerly Allied Electronics): ON Semi NSS40301MDR2G Dual NPN Bipolar Transistor; 3 A; 40 V; 8-Pin SOIC

***ical: Trans GP BJT NPN 40V 3A 783mW Automotive 8-Pin SOIC N T/R

***ure Electronics: NSS Series 40 V 3 A Surface Mount Low Vce NPN Transistor - SOIC-8

***r Electronics: Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon

***emi: Low VCE(sat) Transistor, Dual NPN, 40 V, 3.0 A

***enic: 40V 783mW 3A 320@2A2V 100MHz 82mV@2A200mA 2 NPN -55¡Í~+150¡Í@(Tj) SOIC-8 Bipolar Transistors - BJT ROHS

***th Star Micro: These transistors are part of the ON Semiconductor e2PowerEdge family of Low Vce(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters including ultra low saturation voltage Vce(sat) high current gain and Base/Emitter turn on voltage. Typical applications are current mirrors differential amplifiers DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones PDAs computers printers digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

***ical: Trans GP BJT NPN 40V 3A 783mW Automotive 8-Pin SOIC N T/R

***emi: Low VCE(sat) Transistor, Dual NPN, 40 V, 3.0 A

***r Electronics: Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon

*** Electronics: Bipolar Transistors - BJT SOIC8 MATCHED LO VCE(SAT)

***et Europe: Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R

*** Stop Electro: Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon

***el Electronic: Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP

***emi: Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A

***th Star Micro: ON Semiconductors e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

Market price

부분 #	제조	설명	재고	가격
NSS40302PDR2G DISTI # V72:2272_07309873	ON Semiconductor	Trans GP BJT NPN/PNP 40V 3A Automotive 8-Pin SOIC N T/R RoHS: Compliant	624	500:$0.3608 250:$0.3650 100:$0.3794 25:$0.5775 10:$0.5780 1:$0.6896
NSS40302PDR2G DISTI # NSS40302PDR2GOSCT-ND	ON Semiconductor	TRANS NPN/PNP 40V 3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2300In Stock	1000:$0.3336 500:$0.4170 100:$0.5275 10:$0.6880 1:$0.7800
NSS40302PDR2G DISTI # NSS40302PDR2GOSDKR-ND	ON Semiconductor	TRANS NPN/PNP 40V 3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2300In Stock	1000:$0.3336 500:$0.4170 100:$0.5275 10:$0.6880 1:$0.7800
NSS40302PDR2G DISTI # NSS40302PDR2GOSTR-ND	ON Semiconductor	TRANS NPN/PNP 40V 3A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	12500:$0.2699 5000:$0.2733 2500:$0.2935
NSS40302PDR2G DISTI # 26622122	ON Semiconductor	Trans GP BJT NPN/PNP 40V 3A Automotive 8-Pin SOIC N T/R RoHS: Compliant	5000	2500:$0.2446
NSS40302PDR2G DISTI # 25774882	ON Semiconductor	Trans GP BJT NPN/PNP 40V 3A Automotive 8-Pin SOIC N T/R RoHS: Compliant	624	500:$0.3608 250:$0.3650 100:$0.3794 26:$0.5775
NSS40302PDR2G DISTI # NSS40302PDR2G	ON Semiconductor	Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Bulk (Alt: NSS40302PDR2G) RoHS: Compliant Min Qty: 1191 Container: Bulk	Americas - 0	1191:$0.2739 1193:$0.2719 2384:$0.2689 5955:$0.2649 11910:$0.2589
NSS40302PDR2G DISTI # NSS40302PDR2G	ON Semiconductor	Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Tape and Reel (Alt: NSS40302PDR2G) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2519 5000:$0.2499 10000:$0.2469 15000:$0.2439 25000:$0.2379
NSS40302PDR2G DISTI # 31AC0988	ON Semiconductor	TRANSISTOR ARRAY, NPN/PNP, 40V, SOIC,Transistor Polarity:NPN, PNP,Collector Emitter Voltage V(br)ceo:40V,Power Dissipation Pd:783mW,DC Collector Current:3A,DC Current Gain hFE:200hFE,Transistor Case Style:SOIC,No. of RoHS Compliant: Yes	1819	1000:$0.3090 500:$0.3350 250:$0.3600 100:$0.3860 50:$0.4570 25:$0.5270 10:$0.5980 1:$0.7200
NSS40302PDR2G DISTI # 13P5599	ON Semiconductor	COMP 40V NPN/PNP LO VCE / REEL	0	5000:$0.2670 2500:$0.2750 1000:$0.3230 500:$0.3770 250:$0.3880 100:$0.4000 25:$0.6120 1:$0.7860
NSS40302PDR2G DISTI # 70467471	ON Semiconductor	ON Semi NSS40302PDR2G Dual NPN+PNP Bipolar Transistor,3 A,40 V,8-Pin SOIC RoHS: Compliant	0	50:$0.3100 100:$0.3000 250:$0.2900 500:$0.2800 1250:$0.2600
NSS40302PDR2G DISTI # 863-NSS40302PDR2G	ON Semiconductor	Bipolar Transistors - BJT COMP NPN/PNP LO VCE 40V 6A RoHS: Compliant	2585	1:$0.7200 10:$0.5980 100:$0.3860 1000:$0.3090 2500:$0.2610 10000:$0.2510 25000:$0.2410
NSS40302PDR2G	ON Semiconductor	Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon RoHS: Compliant	29931	1000:$0.2800 500:$0.2900 100:$0.3000 25:$0.3200 1:$0.3400
NSS40302PDR2G DISTI # 2774845	ON Semiconductor	TRANSISTOR ARRAY, NPN/PNP, 40V, SOIC RoHS: Compliant	1879	500:£0.2330 250:£0.2650 100:£0.2970 25:£0.4770 5:£0.5190
NSS40302PDR2G DISTI # 2774845	ON Semiconductor	TRANSISTOR ARRAY, NPN/PNP, 40V, SOIC RoHS: Compliant	1819	1000:$0.4440 250:$0.5420 100:$0.6610 10:$0.9680 1:$1.1300

영상	부분 #	설명
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	Mfr.#: NSS40301MDR2G OMO.#: OMO-NSS40301MDR2G	Bipolar Transistors - BJT MATCHED LO VCE(SAT) SOIC8
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	Mfr.#: LM311D OMO.#: OMO-LM311D-TEXAS-INSTRUMENTS	IC DIFF COMP W/STROBE 8-SOIC
	Mfr.#: RCER71H335K3K1H03B OMO.#: OMO-RCER71H335K3K1H03B-MURATA-ELECTRONICS	Multilayer Ceramic Capacitors MLCC - Leaded 3.3uF 50volts X7R LS=5mm +/-10%
	Mfr.#: 22-01-3107 OMO.#: OMO-22-01-3107-410	Headers & Wire Housings HSG 10P W/RAMP/RIBS
	Mfr.#: 3296W-1-103LF OMO.#: OMO-3296W-1-103LF-BOURNS	Trimmer Resistors - Through Hole 3/8" 10Kohms Sealed Vertical Adjust
	Mfr.#: CRCW080510K0FKEAC OMO.#: OMO-CRCW080510K0FKEAC-VISHAY-DALE	D12/CRCW0805-C 100 10K 1% ET1
	Mfr.#: PIC12F1822-I/SN OMO.#: OMO-PIC12F1822-I-SN-MICROCHIP-TECHNOLOGY	IC MCU 8BIT 3.5KB FLASH 8SOIC

NSS40302PDR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes