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STGF8NC60KD

STGF8NC60KD
Mfr. #:
STGF8NC60KD
제조사:
STMicroelectronics
설명:
IGBT Transistors N Ch 500V 0.40 11A Pwr MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGF8NC60KD 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGF8NC60KD 추가 정보 STGF8NC60KD Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-220-3 FP
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
최대 게이트 이미터 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
STGF8NC60KD
연속 수집가 현재 IC 최대:
7 A
키:
9.3 mm
길이:
10.4 mm
너비:
4.6 mm
상표:
ST마이크로일렉트로닉스
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
1000
하위 카테고리:
IGBT
단위 무게:
0.081130 oz
Tags
STGF, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 15A, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3
***ark
IGBT, 600V, 15A, TO-220; Continuous Collector Current:15A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:65W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes
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Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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STGF10NC60KD,IGBT N-ch 600V 10A TO220FP
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Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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IGBT, TO-220FP; DC Collector Current: 6A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 20W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating
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부분 # 제조 설명 재고 가격
STGF8NC60KD
DISTI # 497-7478-5-ND		STMicroelectronicsIGBT 600V 7A 24W TO220FP
RoHS: Compliant
Min Qty: 2000
Container: Tube		Temporarily Out of Stock
  • 2000:$0.5630
STGF8NC60KD
DISTI # 511-STGF8NC60KD		STMicroelectronicsIGBT Transistors N Ch 500V 0.40 11A Pwr MOSFET
RoHS: Compliant		2474
  • 1:$1.2600
  • 10:$1.0800
  • 100:$0.8240
  • 500:$0.7280
  • 1000:$0.5750
  • 2000:$0.5100
STGF8NC60KDSTMicroelectronics 
RoHS: Compliant		Europe - 2950
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    STGF14NC60KD

    Mfr.#: STGF14NC60KD

    OMO.#: OMO-STGF14NC60KD-STMICROELECTRONICS

    		 IGBT 600V 11A 28W TO220FP
    유효성
    재고:
    Available
    주문 시:
    1985
    수량 입력:
    STGF8NC60KD의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$1.26
    US$1.26
    10
    US$1.08
    US$10.80
    100
    US$0.82
    US$82.40
    500
    US$0.73
    US$364.00
    1000
    US$0.58
    US$575.00
    2000
    US$0.51
    US$1 020.00
    10000
    US$0.49
    US$4 910.00
    25000
    US$0.48
    US$11 875.00
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