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SQJB60EP-T1_GE3

SQJB60EP-T1_GE3
Mfr. #:
SQJB60EP-T1_GE3
제조사:
Vishay
설명:
MOSFET 2 N-CH 60V POWERPAK SO8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SQJB60EP-T1_GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SQJB60EP-T1_GE3 추가 정보
제품 속성
속성 값
Tags
SQJB6, SQJB, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 30A Automotive 8-Pin PowerPAK SO EP
***et
Trans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET 2 N-CH 60V POWERPAK SO8
***ronik
N+N-CH 60V 30A 12mOhm PPAK SO8L
***ark
Mosfet, Aec-Q101, Dual N-Ch, Powerpakso; Transistor Polarity:dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.01Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; Transistor Case Style:PowerPAK SO; No. of Pins:6Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, AEC-Q101, DOPPIO CA-N POWERPAKSO; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.01ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:48W; Modello Case Transistor:PowerPAK SO; No. di Pin:6Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
부분 # 제조 설명 재고 가격
SQJB60EP-T1_GE3
DISTI # V72:2272_17600342		Vishay IntertechnologiesSQJB60EP-T1_GE3**MULT1
9172
3107019		2780
  • 3000:$0.4744
SQJB60EP-T1_GE3
DISTI # V36:1790_17600342		Vishay IntertechnologiesSQJB60EP-T1_GE3**MULT1
9172
3107019		0
    SQJB60EP-T1_GE3
    DISTI # SQJB60EP-T1_GE3TR-ND    		Vishay SiliconixMOSFET 2 N-CH 60V POWERPAK SO8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$0.4368
    • 3000:$0.4586
    SQJB60EP-T1_GE3
    DISTI # SQJB60EP-T1_GE3CT-ND    		Vishay SiliconixMOSFET 2 N-CH 60V POWERPAK SO8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$0.5061
    • 500:$0.6411
    • 100:$0.7761
    • 10:$0.9950
    • 1:$1.1100
    SQJB60EP-T1_GE3
    DISTI # SQJB60EP-T1_GE3DKR-ND    		Vishay SiliconixMOSFET 2 N-CH 60V POWERPAK SO8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$0.5061
    • 500:$0.6411
    • 100:$0.7761
    • 10:$0.9950
    • 1:$1.1100
    SQJB60EP-T1_GE3
    DISTI # SQJB60EP-T1_GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R (Alt: SQJB60EP-T1_GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.4359
    • 18000:€0.4549
    • 12000:€0.5149
    • 6000:€0.6349
    • 3000:€0.8859
    SQJB60EP-T1_GE3
    DISTI # SQJB60EP-T1_GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R (Alt: SQJB60EP-T1_GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SQJB60EP-T1_GE3
      DISTI # SQJB60EP-T1_GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJB60EP-T1_GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.3999
      • 18000:$0.4109
      • 12000:$0.4219
      • 6000:$0.4399
      • 3000:$0.4539
      SQJB60EP-T1_GE3
      DISTI # 20AC3998      		Vishay IntertechnologiesDUAL N-CHANNEL 60-V (D-S) 175C MOSFE0
      • 10000:$0.3970
      • 6000:$0.4060
      • 4000:$0.4220
      • 2000:$0.4680
      • 1000:$0.5150
      • 1:$0.5370
      SQJB60EP-T1_GE3
      DISTI # 99Y9674      		Vishay IntertechnologiesMOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes1360
      • 500:$0.7070
      • 250:$0.8050
      • 100:$0.9040
      • 50:$0.9700
      • 25:$1.0400
      • 10:$1.1000
      • 1:$1.2400
      SQJB60EP-T1_GE3
      DISTI # 78-SQJB60EP-T1_GE3      		Vishay IntertechnologiesMOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
      RoHS: Compliant      		0
      • 1:$1.2300
      • 10:$1.0900
      • 100:$0.8950
      • 500:$0.7000
      • 1000:$0.5590
      • 3000:$0.5080
      • 6000:$0.4390
      • 9000:$0.4220
      SQJB60EP-T1_GE3
      DISTI # TMOS1701      		Vishay IntertechnologiesN+N-CH 60V 30A 12mOhm PPAK SO8L
      RoHS: Compliant      		Stock DE - 0Stock HK - 0Stock US - 0
      • 3000:$0.5111
      SQJB60EP-T1_GE3
      DISTI # 2663702      		Vishay IntertechnologiesMOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO
      RoHS: Compliant      		1360
      • 100:$1.3300
      • 10:$1.6800
      • 1:$1.9000
      SQJB60EP-T1_GE3
      DISTI # 2663702      		Vishay IntertechnologiesMOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO1446
      • 100:£0.7540
      • 25:£0.9810
      • 5:£1.0900
      영상 부분 # 설명
      SQJB60EP-T1_GE3

      Mfr.#: SQJB60EP-T1_GE3

      OMO.#: OMO-SQJB60EP-T1-GE3

      		 MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
      SQJB60EP-T2_GE3

      Mfr.#: SQJB60EP-T2_GE3

      OMO.#: OMO-SQJB60EP-T2-GE3

      		 MOSFET 60V Vds 20V Vgs PowerPAK SO-8L
      SQJB60EP-T1_GE3

      Mfr.#: SQJB60EP-T1_GE3

      OMO.#: OMO-SQJB60EP-T1-GE3-VISHAY

      		 MOSFET 2 N-CH 60V POWERPAK SO8
      유효성
      재고:
      Available
      주문 시:
      3500
      수량 입력:
      SQJB60EP-T1_GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.60
      US$0.60
      10
      US$0.57
      US$5.66
      100
      US$0.54
      US$53.60
      500
      US$0.51
      US$253.10
      1000
      US$0.48
      US$476.40
      시작
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