SI5902BDC-T1-E3

Mfr. #:: SI5902BDC-T1-E3
제조사:: Vishay
설명:: IGBT Transistors MOSFET 30V 4.0A 3.12W
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI5902BDC-T1-E3 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: 테이프 및 릴(TR)

부분 별칭: SI5902BDC-E3

단위 무게: 0.002998 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SMD, Flat Lead

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 1206-8 ChipFET

구성: 듀얼

FET형: 2 N-Channel (Dual)

파워맥스: 3.12W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 220pF @ 15V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 4A

Rds-On-Max-Id-Vgs: 65 mOhm @ 3.1A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 7nC @ 10V

Pd 전력 손실: 1.5 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 80 ns 12 ns

상승 시간: 80 ns 12 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 3.7 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 65 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 12 ns 10 ns

일반 켜기 지연 시간: 15 ns 4 ns

채널 모드: 상승

Tags: SI5902B, SI5902, SI590, SI59, SI5

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI5902BDC-T1-E3 설명

***ure Electronics: Dual N-Channel 30 V 0.065 O 7 nC Surface Mount Mosfet - ChipFET-1206-8

***et Europe: Transistor MOSFET Array Dual N-CH 30V 4A 8-Pin Chip FET T/R

***ark: Transistor; Continuous Drain Current, Id:4000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
SI5902BDC-T1-E3 DISTI # V72:2272_09216236	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	2408	1000:$0.5185 500:$0.6384 250:$0.7282 100:$0.7361 25:$0.9183 10:$0.9290 1:$1.0830
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1985In Stock	1000:$0.6458 500:$0.8180 100:$1.0548 10:$1.3350 1:$1.5100
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1985In Stock	1000:$0.6458 500:$0.8180 100:$1.0548 10:$1.3350 1:$1.5100
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5852
SI5902BDC-T1-E3 DISTI # 30316800	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	2408	1000:$0.5185 500:$0.6384 250:$0.7282 100:$0.7361 25:$0.9183 12:$0.9290
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5902BDC-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5529 6000:$0.5359 12000:$0.5139 18000:$0.4999 30000:$0.4869
SI5902BDC-T1-E3 DISTI # 16P3794	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 30V, 1206,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Product Range:-RoHS Compliant: Yes	0	1:$1.4300 25:$1.3600 50:$1.2300 100:$1.1100 250:$1.0100 500:$0.8400 1000:$0.7450
SI5902BDC-T1-E3 DISTI # 75M5527	Vishay Intertechnologies	DUAL N-CH 30V (D-S) MOSFET ROHS COMPLIANT: YES	0	1:$0.6540 1000:$0.6270 2000:$0.5700 4000:$0.5130 6000:$0.4940 10000:$0.4830
SI5902BDC-T1-E3 DISTI # 781-SI5902BDC-E3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant	2710	1:$1.3300 10:$1.1000 100:$0.8400 500:$0.7230 1000:$0.5700 3000:$0.5320
SI5902BDCT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 6000
SI5902BDC-T1-E3			1918
SI5902BDC-T1-E3 DISTI # C1S803603325600	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2408	250:$0.7282 100:$0.7361 25:$0.9183 10:$0.9290
SI5902BDC-T1-E3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant	Americas -

영상	부분 #	설명
	Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
	Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
	Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3-VISHAY	IGBT Transistors MOSFET 30V 4.0A 3.12W
	Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3-VISHAY	MOSFET 2N-CH 30V 4A 1206-8
	Mfr.#: SI5902BDCT1E3 OMO.#: OMO-SI5902BDCT1E3-1190	Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI5902BDC-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes