SI5902BDC-T1-GE3

Mfr. #:: SI5902BDC-T1-GE3
제조사:: Vishay
설명:: MOSFET 2N-CH 30V 4A 1206-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI5902BDC-T1-GE3 데이터 시트
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추가 정보:: SI5902BDC-T1-GE3 추가 정보

제품 속성
속성 값

Tags: SI5902B, SI5902, SI590, SI59, SI5

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI5902BDC-T1-GE3 설명

***ied Electronics & Automation: SI5902BDC-T1-GE3 Dual N-channel MOSFET Transistor; 3.7 A; 30V; 8-Pin 1206 ChipFET

***ure Electronics: Dual N-Channel 30 V 0.065 O 7 nC Surface Mount Mosfet - ChipFET-1206-8

***nell: MOSFET, DUAL, N-CH, 30V, 4A, 1206-8

***et Europe: Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R

***i-Key: MOSFET 2N-CH 30V 4A 1206-8

***Components: TRANS MOSFET N-CH 30V 3.7A

***ronik: DUAL 30V 4A 65mOhm ChipFET

***: DUAL N-CH 30V (D-S)

***ark: Transistor Polarity:dual N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:3.12W; No. Of Pins:8Pins Rohs Compliant: No

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL, N-CH, 30V, 4A, 1206-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:3.12W; Transistor Case Style:ChipFET; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015)

SI5902BDC-T1-GE3 추가 정보

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

부분 #	제조	설명	재고	가격
SI5902BDC-T1-GE3 DISTI # V72:2272_09216238	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	2793	1000:$0.5570 500:$0.6838 250:$0.8017 100:$0.8347 25:$0.9731 10:$1.0812 1:$1.4362
SI5902BDC-T1-GE3 DISTI # V36:1790_09216238	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	0	3000:$0.5181
SI5902BDC-T1-GE3 DISTI # SI5902BDC-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9551In Stock	1000:$0.6165 500:$0.7808 100:$0.9452 10:$1.2120 1:$1.3600
SI5902BDC-T1-GE3 DISTI # SI5902BDC-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9551In Stock	1000:$0.6165 500:$0.7808 100:$0.9452 10:$1.2120 1:$1.3600
SI5902BDC-T1-GE3 DISTI # SI5902BDC-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	15000:$0.5107 6000:$0.5307 3000:$0.5586
SI5902BDC-T1-GE3 DISTI # 33635116	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	2793	14:$1.4362
SI5902BDC-T1-GE3 DISTI # SI5902BDC-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5902BDC-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.4872 18000:$0.5007 12000:$0.5149 6000:$0.5367 3000:$0.5531
SI5902BDC-T1-GE3 DISTI # SI5902BDC-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R (Alt: SI5902BDC-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI5902BDC-T1-GE3 DISTI # 04X9765	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R - Product that comes on tape, but is not reeled (Alt: 04X9765) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.7130 500:$0.9040 250:$0.9780 100:$1.0500 50:$1.2100 25:$1.3800 1:$1.6600
SI5902BDC-T1-GE3 DISTI # 86R3904	Vishay Intertechnologies	MOSFET, DUAL N-CH, 30V, 4A, CHIPFET-8, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes	0	10000:$0.4830 6000:$0.4940 4000:$0.5130 2000:$0.5700 1000:$0.6270 1:$0.6540
SI5902BDC-T1-GE3 DISTI # 04X9765	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 30V, 4A, CHIPFET-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	1458	1:$0.4470 25:$0.4470 50:$0.4470 100:$0.4470 250:$0.4470 500:$0.4470 1000:$0.4470
SI5902BDC-T1-GE3. DISTI # 15AC0301	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:3.12W,No. of Pins:8Pins RoHS Compliant: No	0	10000:$0.4830 6000:$0.4940 4000:$0.5130 2000:$0.5700 1000:$0.6270 1:$0.6540
SI5902BDC-T1-GE3 DISTI # 70616989	Vishay Siliconix	SI5902BDC-T1-GE3 Dual N-channel MOSFET Transistor,3.7 A,30V,8-Pin 1206 ChipFET RoHS: Compliant	0	300:$0.7800 600:$0.7000 1500:$0.6300 3000:$0.6100
SI5902BDC-T1-GE3 DISTI # 78-SI5902BDC-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant	4563	1:$1.3200 10:$1.0900 100:$0.8390 500:$0.7220 1000:$0.5690 3000:$0.5310 6000:$0.5050 9000:$0.4940
SI5902BDC-T1-GE3 DISTI # 2454808	Vishay Intertechnologies	MOSFET, DUAL, N-CH, 30V, 4A, 1206-8 RoHS: Compliant	0	3000:$0.8420 1000:$0.8590 500:$1.0900 100:$1.2700 10:$1.6600 1:$2.0000
SI5902BDC-T1-GE3 DISTI # 2454808RL	Vishay Intertechnologies	MOSFET, DUAL, N-CH, 30V, 4A, 1206-8 RoHS: Compliant	0	3000:$0.8420 1000:$0.8590 500:$1.0900 100:$1.2700 10:$1.6600 1:$2.0000
SI5902BDC-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant	Americas - 3000	3000:$0.5330 6000:$0.5060 12000:$0.4900 18000:$0.4770

영상	부분 #	설명
	Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
	Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
	Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3-VISHAY	IGBT Transistors MOSFET 30V 4.0A 3.12W
	Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3-VISHAY	MOSFET 2N-CH 30V 4A 1206-8
	Mfr.#: SI5902BDCT1E3 OMO.#: OMO-SI5902BDCT1E3-1190	Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI5902BDC-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes