IPD80R4K5P7ATMA1

IPD80R4K5P7ATMA1
Mfr. #:
IPD80R4K5P7ATMA1
제조사:
Infineon Technologies
설명:
MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD80R4K5P7ATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPD80R4K5P7ATMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
800 V
Id - 연속 드레인 전류:
1.5 A
Rds On - 드레인 소스 저항:
4.5 Ohms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
4 nC
최소 작동 온도:
- 50 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
13 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
키:
2.3 mm
길이:
6.5 mm
시리즈:
CoolMOS P7
너비:
6.22 mm
상표:
인피니언 테크놀로지스
가을 시간:
80 ns
상품 유형:
MOSFET
상승 시간:
15 ns
공장 팩 수량:
2500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
60 ns
일반적인 켜기 지연 시간:
15 ns
부품 번호 별칭:
IPD80R4K5P7 SP001422632
단위 무게:
0.011993 oz
Tags
IPD80R4K, IPD80R4, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 4.5 Ohm 4 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 800V, 1.5A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):3.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
부분 # 제조 설명 재고 가격
IPD80R4K5P7ATMA1
DISTI # V72:2272_16563311
Infineon Technologies AGTrans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R2295
  • 1000:$0.2834
  • 500:$0.3147
  • 250:$0.3497
  • 100:$0.3653
  • 25:$0.5256
  • 10:$0.6312
  • 1:$0.7608
IPD80R4K5P7ATMA1
DISTI # V36:1790_16563311
Infineon Technologies AGTrans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R0
  • 2500000:$0.2197
  • 1250000:$0.2200
  • 250000:$0.2421
  • 25000:$0.2807
  • 2500:$0.2871
IPD80R4K5P7ATMA1
DISTI # IPD80R4K5P7ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 800V 1.5A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IPD80R4K5P7ATMA1
    DISTI # IPD80R4K5P7ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 800V 1.5A DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IPD80R4K5P7ATMA1
      DISTI # IPD80R4K5P7ATMA1TR-ND
      Infineon Technologies AGMOSFET N-CH 800V 1.5A DPAK
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 2500:$0.2871
      IPD80R4K5P7ATMA1
      DISTI # 32638869
      Infineon Technologies AGTrans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R2500
      • 2500:$0.2363
      IPD80R4K5P7ATMA1
      DISTI # 32004576
      Infineon Technologies AGTrans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R2295
      • 27:$0.7608
      IPD80R4K5P7ATMA1
      DISTI # IPD80R4K5P7ATMA1
      Infineon Technologies AGTrans MOSFET N 800V 1.5A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R4K5P7ATMA1)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel
      Americas - 0
      • 25000:$0.2389
      • 15000:$0.2429
      • 10000:$0.2519
      • 5000:$0.2609
      • 2500:$0.2709
      IPD80R4K5P7ATMA1
      DISTI # SP001422632
      Infineon Technologies AGTrans MOSFET N 800V 1.5A 3-Pin TO-252 T/R (Alt: SP001422632)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel
      Europe - 0
      • 25000:€0.2599
      • 15000:€0.2809
      • 10000:€0.3119
      • 5000:€0.3499
      • 2500:€0.4129
      IPD80R4K5P7ATMA1
      DISTI # 34AC1690
      Infineon Technologies AGMOSFET, N-CH, 800V, 1.5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:1.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):3.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes1789
      • 1000:$0.3050
      • 500:$0.3310
      • 250:$0.3560
      • 100:$0.3820
      • 50:$0.4510
      • 25:$0.5210
      • 10:$0.5910
      • 1:$0.7070
      IPD80R4K5P7ATMA1
      DISTI # 726-IPD80R4K5P7ATMA1
      Infineon Technologies AGMOSFET
      RoHS: Compliant
      6542
      • 1:$0.7000
      • 10:$0.5850
      • 100:$0.3780
      • 1000:$0.3020
      IPD80R4K5P7ATMA1
      DISTI # 1300909P
      Infineon Technologies AGMOSFET N-CH 800V 1.5A COOLMOS P7 TO-252, RL2490
      • 2500:£0.2110
      • 1000:£0.2430
      • 500:£0.2770
      • 50:£0.3380
      IPD80R4K5P7ATMA1
      DISTI # IPD80R4K5P7
      Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,1A,13W,PG-TO252-34
      • 500:$0.3600
      • 100:$0.3900
      • 25:$0.4300
      • 5:$0.5300
      • 1:$0.6300
      IPD80R4K5P7ATMA1
      DISTI # 2781178
      Infineon Technologies AGMOSFET, N-CH, 800V, 1.5A, TO-252
      RoHS: Compliant
      1789
      • 5000:$0.3810
      • 1000:$0.4020
      • 500:$0.4250
      • 250:$0.4910
      • 100:$0.5820
      • 25:$0.7120
      • 5:$0.8190
      IPD80R4K5P7ATMA1
      DISTI # 2781178
      Infineon Technologies AGMOSFET, N-CH, 800V, 1.5A, TO-2522009
      • 500:£0.2500
      • 250:£0.2690
      • 100:£0.2880
      • 10:£0.4930
      • 1:£0.6110
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      유효성
      재고:
      Available
      주문 시:
      1989
      수량 입력:
      IPD80R4K5P7ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.70
      US$0.70
      10
      US$0.58
      US$5.85
      100
      US$0.38
      US$37.80
      1000
      US$0.30
      US$302.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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