IPD80R2K0P7ATMA1

Mfr. #:: IPD80R2K0P7ATMA1
제조사:: Infineon Technologies
설명:: MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPD80R2K0P7ATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IPD80R2K0P7ATMA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: DPAK-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 800 V

Id - 연속 드레인 전류:: 3 A

Rds On - 드레인 소스 저항:: 1.7 Ohms

Vgs th - 게이트 소스 임계 전압:: 2.5 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 9 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 24 W

구성:: 하나의

채널 모드:: 상승

상표명:: 쿨모스

포장:: 릴

시리즈:: CoolMOS P7

트랜지스터 유형:: 1 N-Channel

상표:: 인피니언 테크놀로지스

가을 시간:: 20 ns

상품 유형:: MOSFET

상승 시간:: 8 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 40 ns

일반적인 켜기 지연 시간:: 10 ns

부품 번호 별칭:: IPD80R2K0P7 SP001634906

단위 무게:: 0.013655 oz

Tags: IPD80R2K, IPD80R2, IPD80R, IPD80, IPD8, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD80R2K0P7ATMA1 추가 정보

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

800V CoolMOS P7 MOSFETs: Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Market price

부분 #	제조	설명	재고	가격
IPD80R2K0P7ATMA1 DISTI # V36:1790_18205136	Infineon Technologies AG	LOW POWER_NEW	5000	2500:$0.3682
IPD80R2K0P7ATMA1 DISTI # V72:2272_18205136	Infineon Technologies AG	LOW POWER_NEW	2500	1000:$0.3577 500:$0.4552 250:$0.4909 100:$0.5094 25:$0.6433 10:$0.6448 1:$0.7349
IPD80R2K0P7ATMA1 DISTI # IPD80R2K0P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 3A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6764In Stock	1000:$0.4281 500:$0.5423 100:$0.6992 10:$0.8850 1:$1.0000
IPD80R2K0P7ATMA1 DISTI # IPD80R2K0P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 3A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6764In Stock	1000:$0.4281 500:$0.5423 100:$0.6992 10:$0.8850 1:$1.0000
IPD80R2K0P7ATMA1 DISTI # IPD80R2K0P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 3A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	25000:$0.3527 12500:$0.3547 5000:$0.3685 2500:$0.3879
IPD80R2K0P7ATMA1 DISTI # 30656610	Infineon Technologies AG	LOW POWER_NEW	5000	2500:$0.3958
IPD80R2K0P7ATMA1 DISTI # 30532133	Infineon Technologies AG	LOW POWER_NEW	2500	1000:$0.3845 500:$0.4893 250:$0.5277 100:$0.5476 25:$0.6915 20:$0.6932
IPD80R2K0P7ATMA1 DISTI # 30163446	Infineon Technologies AG	LOW POWER_NEW	2500	2500:$0.3724
IPD80R2K0P7ATMA1 DISTI # SP001634906	Infineon Technologies AG	LOW POWER_NEW (Alt: SP001634906) RoHS: Compliant Min Qty: 2500	Europe - 2500	2500:€0.4659 5000:€0.3809 10000:€0.3489 15000:€0.3219 25000:€0.2989
IPD80R2K0P7ATMA1 DISTI # IPD80R2K0P7ATMA1	Infineon Technologies AG	LOW POWER_NEW - Tape and Reel (Alt: IPD80R2K0P7ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3619 5000:$0.3489 10000:$0.3369 15000:$0.3249 25000:$0.3199
IPD80R2K0P7ATMA1 DISTI # 24AC9042	Infineon Technologies AG	MOSFET, N-CH, 800V, 3A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	1655	1000:$0.3780 500:$0.4790 250:$0.5110 100:$0.5420 50:$0.5970 25:$0.6510 10:$0.7060 1:$0.8200
IPD80R2K0P7ATMA1 DISTI # 726-IPD80R2K0P7ATMA1	Infineon Technologies AG	MOSFET RoHS: Compliant	9796	1:$0.8200 10:$0.7060 100:$0.5420 500:$0.4790 1000:$0.3780
IPD80R2K0P7ATMA1 DISTI # 2771320	Infineon Technologies AG	MOSFET, N-CH, 800V, 3A, TO-252 RoHS: Compliant	2485	500:£0.3760 250:£0.4010 100:£0.4250 25:£0.5630 5:£0.6230
IPD80R2K0P7ATMA1 DISTI # XSKDRABV0021241	Infineon Technologies AG	RoHS: Compliant	7500 in Stock0 on Order	7500:$0.5264 2500:$0.5640
IPD80R2K0P7ATMA1 DISTI # 2771320	Infineon Technologies AG	MOSFET, N-CH, 800V, 3A, TO-252 RoHS: Compliant	1655	1000:$0.6360 500:$0.8060 100:$1.0400 5:$1.3200

관련 상품

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	Mfr.#: IPD80R4K5P7ATMA1 OMO.#: OMO-IPD80R4K5P7ATMA1	MOSFET
	Mfr.#: C2M0280120D OMO.#: OMO-C2M0280120D	MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
	Mfr.#: B140-13-F OMO.#: OMO-B140-13-F	Schottky Diodes & Rectifiers 40V 1A
	Mfr.#: B340-13-F OMO.#: OMO-B340-13-F	Schottky Diodes & Rectifiers 40V 3A
	Mfr.#: C2M0280120D OMO.#: OMO-C2M0280120D-WOLFSPEED	MOSFET N-CH 1200V 10A TO-247-3
	Mfr.#: IPA80R900P7XKSA1 OMO.#: OMO-IPA80R900P7XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CHANNEL 800V 6A TO220
	Mfr.#: AM26LV32EMDREP OMO.#: OMO-AM26LV32EMDREP-TEXAS-INSTRUMENTS	RS-422 Interface IC EP Quad Diff Line Drive

유효성

재고:: Available
주문 시:: 1991
수량 입력:

IPD80R2K0P7ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.82~~; ~~US$0.82~~

10: ~~US$0.71~~; ~~US$7.06~~

100: ~~US$0.54~~; ~~US$54.20~~

500: ~~US$0.48~~; ~~US$239.50~~

1000: ~~US$0.38~~; ~~US$378.00~~

시작

IPD80R2K 9
IPD80R2 12
IPD80R 42
IPD80 56
IPD8 62
IPD 1152

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IPD80R2K0P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes