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PGA26E07BA

PGA26E07BA
Mfr. #:
PGA26E07BA
제조사:
Panasonic
설명:
MOSFET MOSFET 600VDC 70mohm X-GaN
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
PGA26E07BA 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
PGA26E07BA 추가 정보
제품 속성
속성 값
Tags
PGA26E0, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
부분 # 제조 설명 재고 가격
PGA26E07BA
DISTI # 667-PGA26E07BA		Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 70mohm X-GaN
RoHS: Compliant		29
  • 1:$35.4300
  • 10:$33.4600
  • 25:$31.4900
PGA26E07BA-SWEVB008
DISTI # 667-PGA26E07BASWEV8		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant		15
  • 1:$400.0000
PGA26E07BA-SWEVB006
DISTI # 667-PGA26E07BASWEVB6		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN Chopper EVB
RoHS: Compliant		2
  • 1:$375.0000
PGA26E07BA-DB001
DISTI # 667-PGA26E07BADAB001		Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 70mohm X-GaN
RoHS: Compliant		0
  • 1:$55.0000
영상 부분 # 설명
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA

 MOSFET MOSFET 600VDC 190mohm X-GaN
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA

 MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E07-DB001

Mfr.#: PGA26E07-DB001

OMO.#: OMO-PGA26E07-DB001-1190

 신규 및 오리지널
PGA26E07-SWEVB008

Mfr.#: PGA26E07-SWEVB008

OMO.#: OMO-PGA26E07-SWEVB008-1190

 신규 및 오리지널
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA-1190

 MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E19-DB001

Mfr.#: PGA26E19-DB001

OMO.#: OMO-PGA26E19-DB001-1190

 신규 및 오리지널
PGA26E19-SWEVB008

Mfr.#: PGA26E19-SWEVB008

OMO.#: OMO-PGA26E19-SWEVB008-1190

 신규 및 오리지널
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA-1190

 MOSFET MOSFET 600VDC 190mohm X-GaN
유효성
재고:
Available
주문 시:
4000
수량 입력:
PGA26E07BA의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$47.24
US$47.24
10
US$44.87
US$448.73
100
US$42.51
US$4 251.15
500
US$40.15
US$20 074.90
1000
US$37.79
US$37 788.00
시작
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