PGA26E19BA

Mfr. #:: PGA26E19BA
제조사:: Panasonic
설명:: MOSFET MOSFET 600VDC 190mohm X-GaN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: PGA26E19BA 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: PGA26E19BA 추가 정보

제품 속성
속성 값

제조사: 파나소닉

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

RoHS: 세부

채널 수: 1 Channel

Vgs th - 게이트 소스 임계값 전압: 4 V

Qg - 게이트 차지: 120 nC

기술: 시

채널 모드: 상승

상표: 파나소닉

구성: 1 N-Channel

개발 키트: -

가을 시간: -

순방향 트랜스컨덕턴스 - 최소: -

최소 작동 온도: - 55 C

상승 시간: -

시리즈: GaN-FET

트랜지스터 유형: 1 N-Channel

일반적인 끄기 지연 시간: -

일반적인 켜기 지연 시간: -

Tags: PGA26E1, PGA26, PGA2, PGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PGA26E19BA 설명

***asonic SCT: GaN Power Devices, 600V, DFN 8x8, RoHS

PGA26E19BA 추가 정보

PGA26E X-GaN Power Transistors: Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.

X-GaN Power Solutions: Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.

Market price

부분 #	제조	설명	재고	가격
PGA26E19BA DISTI # 667-PGA26E19BA	Panasonic Electronic Components	MOSFET MOSFET 600VDC 190mohm X-GaN RoHS: Compliant	0	1:$18.2900 10:$17.0700 25:$16.2100
PGA26E19BA-SWEVB008 DISTI # 667-PGA26E19BASWEV8	Panasonic Electronic Components	Power Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB RoHS: Compliant	19	1:$400.0000
PGA26E19BA-SWEVB006 DISTI # 667-PGA26E19BASWEVB6	Panasonic Electronic Components	Power Management IC Development Tools 600Vdc 190mOhm X-GaN Chopper EVB RoHS: Compliant	3	1:$300.0000
PGA26E19BA-DB001 DISTI # 667-PGA26E19BADB001	Panasonic Electronic Components	Power Management IC Development Tools SMD-ThruHole ConvKit 600VDC 190mohm X-GaN RoHS: Compliant	0	1:$45.0000

관련 상품

영상	부분 #	설명
	Mfr.#: PGA26E19BA OMO.#: OMO-PGA26E19BA	MOSFET MOSFET 600VDC 190mohm X-GaN
	Mfr.#: PGA26E07BA OMO.#: OMO-PGA26E07BA	MOSFET MOSFET 600VDC 70mohm X-GaN
	Mfr.#: PGA26E07-DB001 OMO.#: OMO-PGA26E07-DB001-1190	신규 및 오리지널
	Mfr.#: PGA26E07-SWEVB008 OMO.#: OMO-PGA26E07-SWEVB008-1190	신규 및 오리지널
	Mfr.#: PGA26E07BA OMO.#: OMO-PGA26E07BA-1190	MOSFET MOSFET 600VDC 70mohm X-GaN
	Mfr.#: PGA26E19-DB001 OMO.#: OMO-PGA26E19-DB001-1190	신규 및 오리지널
	Mfr.#: PGA26E19-SWEVB008 OMO.#: OMO-PGA26E19-SWEVB008-1190	신규 및 오리지널
	Mfr.#: PGA26E19BA OMO.#: OMO-PGA26E19BA-1190	MOSFET MOSFET 600VDC 190mohm X-GaN

유효성

재고:: Available
주문 시:: 3000
수량 입력:

PGA26E19BA의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$24.32~~; ~~US$24.32~~

10: ~~US$23.10~~; ~~US$230.99~~

100: ~~US$21.88~~; ~~US$2 188.35~~

500: ~~US$20.67~~; ~~US$10 333.90~~

1000: ~~US$19.45~~; ~~US$19 452.00~~

시작

PGA26E1 3
PGA26 6
PGA2 152
PGA 421

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PGA26E19BA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes