SI2356DS-T1-GE3

Mfr. #:: SI2356DS-T1-GE3
제조사:: Vishay / Siliconix
설명:: MOSFET 40V Vds 12V Vgs SOT-23
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI2356DS-T1-GE3 데이터 시트
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HTML Datasheet:: SI2356DS-T1-GE3 Datasheet SI2356DS-T1-GE3 Datasheet (P4-P6)SI2356DS-T1-GE3 Datasheet (P7-P9)SI2356DS-T1-GE3 Datasheet (P10)
ECAD Model:
추가 정보:: SI2356DS-T1-GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-23-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 40 V

Id - 연속 드레인 전류:: 4.3 A

Rds On - 드레인 소스 저항:: 51 mOhms

Vgs th - 게이트 소스 임계 전압:: 600 mV

Vgs - 게이트 소스 전압:: 10 V

Qg - 게이트 차지:: 13 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 1.7 W

구성:: 하나의

채널 모드:: 상승

상표명:: TrenchFET

포장:: 릴

키:: 1.45 mm

길이:: 2.9 mm

시리즈:: SI2

트랜지스터 유형:: 1 N-Channel

너비:: 1.6 mm

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 13 S

가을 시간:: 6 ns

상품 유형:: MOSFET

상승 시간:: 12 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 13 ns

일반적인 켜기 지연 시간:: 6 ns

단위 무게:: 0.000282 oz

Tags: SI235, SI23, SI2

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2356DS-T1-GE3 설명

***ure Electronics: Si2356DS Series 40 V 3.2 A 51 mOhm Surface Mount N-Channel Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R

***ark: N-Ch MOSFET SOT-23 copper 40V 51mohm @ 10V

***et: N-CH MOSFET SOT-23 COPPER 40V 51MOHM @ 10V

***i-Key: MOSFET N-CH 40V 4.3A SOT-23

***ronik: N-CHANNEL-FET 4,3A 40V SOT23

***ied Electronics & Automation: 40V .051ohm@10V 4.3A N-Ch T-FET

***: P-CHANNEL 40-V (D-S)

***ment14 APAC: MOSFET, N-CH, 40V, 4.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:1.7W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)

***nell: MOSFET, N-CH, 40V, 4.3A, SOT-23; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:4.3A; Napięcie drenu / źródła Vds:40V; Rezystancja przewodzenia Rds(on):0.042ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:1.5V; Straty mocy Pd:1.7W; Rodzaj obudowy tranzystora:SOT-23; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (20-Jun-2016)

SI2356DS-T1-GE3 추가 정보

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

부분 #	제조	설명	재고	가격
SI2356DS-T1-GE3 DISTI # V72:2272_09216727	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R RoHS: Compliant	2757	1000:$0.1356 500:$0.1789 250:$0.2021 100:$0.2246 25:$0.3306 10:$0.3674 1:$0.5266
SI2356DS-T1-GE3 DISTI # V36:1790_09216727	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R RoHS: Compliant	0
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 4.3A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	87569In Stock	1000:$0.1289 500:$0.1718 100:$0.2291 10:$0.3370 1:$0.4200
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 4.3A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	87569In Stock	1000:$0.1289 500:$0.1718 100:$0.2291 10:$0.3370 1:$0.4200
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 4.3A SOT-23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	87000In Stock	75000:$0.0890 30000:$0.0925 15000:$0.1008 6000:$0.1077 3000:$0.1147
SI2356DS-T1-GE3 DISTI # 32318889	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R RoHS: Compliant	2757	76:$0.5266
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2356DS-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 6000	1500:$0.0988 750:$0.1018 375:$0.1051 188:$0.1085 94:$0.1122 47:$0.1161 1:$0.1204
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 3000	30000:€0.0859 18000:€0.0929 12000:€0.0999 6000:€0.1169 3000:€0.1709
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2356DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.0839 18000:$0.0869 12000:$0.0889 6000:$0.0929 3000:$0.0959
SI2356DS-T1-GE3 DISTI # 05AC9483	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes	27000	1:$0.1370 3000:$0.1370
SI2356DS-T1-GE3 DISTI # 01AC4982	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes	8890	1000:$0.1550 500:$0.1960 250:$0.2340 100:$0.2720 50:$0.3280 25:$0.3830 1:$0.4810
SI2356DS-T1-GE3 DISTI # 70459514	Vishay Siliconix	40V .051ohm@10V 4.3A N-Ch T-FET RoHS: Compliant	0	25:$0.1880 250:$0.1790 500:$0.1700 750:$0.1610 1000:$0.1340
SI2356DS-T1-GE3 DISTI # 78-SI2356DS-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 12V Vgs SOT-23 RoHS: Compliant	76574	1:$0.4300 10:$0.2930 100:$0.1970 500:$0.1580 1000:$0.1190 3000:$0.1090 6000:$0.1020 9000:$0.0950 24000:$0.0880
SI2356DS-T1-GE3 DISTI # TMOSS6841	Vishay Intertechnologies	N-CHANNEL-FET 4,3A 40V SOT23 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.1301 6000:$0.1226 12000:$0.1152 18000:$0.1041 24000:$0.1003
SI2356DS-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 12V Vgs SOT-23 RoHS: Compliant	Americas - 54000
SI2356DS-T1-GE3 DISTI # 2679679	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23	15000	9000:£0.0763 3000:£0.0889
SI2356DS-T1-GE3 DISTI # 2679679	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23 RoHS: Compliant	15000	12000:$0.1260 9000:$0.1300 6000:$0.1310 3000:$0.1350
SI2356DS-T1-GE3 DISTI # 2646369	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23 RoHS: Compliant	8230	1000:$0.1950 500:$0.2590 100:$0.3460 10:$0.5080 1:$0.6300

관련 상품

영상	부분 #	설명
	Mfr.#: NVMFS5C404NLAFT1G OMO.#: OMO-NVMFS5C404NLAFT1G	MOSFET T6 40V HEFET
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	Mfr.#: STM32L073RZT6 OMO.#: OMO-STM32L073RZT6-STMICROELECTRONICS	IC MCU 32BIT 192KB FLASH 64LQFP
	Mfr.#: SI7220DN-T1-E3 OMO.#: OMO-SI7220DN-T1-E3-VISHAY	MOSFET 2N-CH 60V 3.4A 1212-8
	Mfr.#: CRCW06030000Z0EAC OMO.#: OMO-CRCW06030000Z0EAC-VISHAY-DALE	RES SMD 0 OHM JUMP 1/10W 0603
	Mfr.#: NVMFS5C404NLAFT1G OMO.#: OMO-NVMFS5C404NLAFT1G-ON-SEMICONDUCTOR	MOSFET N-CH 40V 370A 5DFN

유효성

재고:: 57
주문 시:: 2040
수량 입력:

SI2356DS-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.43~~; ~~US$0.43~~

10: ~~US$0.29~~; ~~US$2.93~~

100: ~~US$0.20~~; ~~US$19.70~~

500: ~~US$0.16~~; ~~US$79.00~~

1000: ~~US$0.12~~; ~~US$119.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SI235 5
SI23 561
SI2 1125

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SI2356DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes