SI235

SI2356DS-T1-GE3 vs SI2351DS-T1-GE3 vs SI2351DS

 
PartNumberSI2356DS-T1-GE3SI2351DS-T1-GE3SI2351DS
DescriptionMOSFET 40V Vds 12V Vgs SOT-23MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current4.3 A--
Rds On Drain Source Resistance51 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.7 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.45 mm--
Length2.9 mm--
SeriesSI2SI2-
Transistor Type1 N-Channel--
Width1.6 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min13 S--
Fall Time6 ns--
Product TypeMOSFETMOSFET-
Rise Time12 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time6 ns--
Unit Weight0.000282 oz0.000282 oz-
Part # Aliases-SI2351DS-GE3-
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2356DS-T1-GE3 MOSFET 40V Vds 12V Vgs SOT-23
SI2351DS-T1-GE3 MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
SI2351DS 신규 및 오리지널
SI2356DS-T1-GE3-CUT TAPE 신규 및 오리지널
Vishay
Vishay
SI2351DS-T1-E3 MOSFET P-CH 20V 2.8A SOT23-3
SI2351DS-T1-GE3 MOSFET P-CH 20V 2.8A SOT23-3
SI2356DS-T1-GE3 MOSFET N-CH 40V 4.3A SOT-23
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