We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| RFD8P05SM DISTI # RFD8P05SM-ND | ON Semiconductor | MOSFET P-CH 50V 8A TO-252AA RoHS: Not compliant Min Qty: 1800 Container: Tube | Limited Supply - Call | |
| RFD8P05SM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 3600 |
|
| RFD8P05SM9A | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 3171 |
|
| RFD8P05SM9AS2463 | Harris Semiconductor | RoHS: Not Compliant | 2500 |
|
| RFD8P05SM DISTI # 512-RFD8P05SM | ON Semiconductor | MOSFET TO-252AA P-Ch Power RoHS: Not compliant | 0 | |
| RFD8P05SM9A DISTI # 512-RFD8P05SM9A | ON Semiconductor | MOSFET TO-252 RoHS: Not compliant | 0 | |
| RFD8P05SM | Harris Semiconductor | 8 A, 50 V, 0.3 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-252AA | 431 |
|
| RFD8P05SM | HARTING Technology Group | RoHS: Not Compliant | Europe - 3017 | |
| RFD8P05SM96 | HARTING Technology Group | RoHS: Not Compliant | Europe - 750 | |
| RFD8P05SM9A | HARTING Technology Group | RoHS: Not Compliant | Europe - 54200 | |
| RFD8P05SM | Harris Semiconductor | INSTOCK | 3751 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: RFD802 OMO.#: OMO-RFD802-1190 |
신규 및 오리지널 |
|
|
Mfr.#: RFD887A OMO.#: OMO-RFD887A-1190 |
신규 및 오리지널 |
|
|
Mfr.#: RFD8P03L OMO.#: OMO-RFD8P03L-1190 |
신규 및 오리지널 |
|
|
Mfr.#: RFD8P05SM96 OMO.#: OMO-RFD8P05SM96-1190 |
신규 및 오리지널 |
|
|
Mfr.#: RFD8P05SM9A OMO.#: OMO-RFD8P05SM9A-1190 |
Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: RFD8P06 OMO.#: OMO-RFD8P06-1190 |
신규 및 오리지널 |
|
|
Mfr.#: RFD8P06E OMO.#: OMO-RFD8P06E-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD8P06ESM9A OMO.#: OMO-RFD8P06ESM9A-1190 |
(Alt: RFD8P06ESM9A) |
|
|
Mfr.#: RFD8P06LESM OMO.#: OMO-RFD8P06LESM-1190 |
8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
|
|
Mfr.#: RFD8P06LESM9A OMO.#: OMO-RFD8P06LESM9A-1190 |
- Bulk (Alt: RFD8P06LESM9A) |