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HTML Datasheet:: IRFL4315TRPBF Datasheet IRFL4315TRPBF Datasheet (P4-P6)IRFL4315TRPBF Datasheet (P7-P8)

IRFL4315TRPBF

Mfr. #:: IRFL4315TRPBF
제조사:: Infineon Technologies
설명:: MOSFET MOSFT 150V 2.6A 185mOhm 12nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRFL4315TRPBF 데이터 시트
ECAD Model:

유효성

재고:: Available
주문 시:: 1000
수량 입력:

IRFL4315TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.75~~; ~~US$0.75~~

10: ~~US$0.62~~; ~~US$6.24~~

100: ~~US$0.40~~; ~~US$40.30~~

1000: ~~US$0.32~~; ~~US$323.00~~

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-223-4

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 150 V

Id - 연속 드레인 전류:: 2.6 A

Rds On - 드레인 소스 저항:: 185 mOhms

Vgs - 게이트 소스 전압:: 30 V

Qg - 게이트 차지:: 12 nC

Pd - 전력 손실:: 2.8 W

구성:: 하나의

포장:: 릴

키:: 1.6 mm

길이:: 6.5 mm

트랜지스터 유형:: 1 N-Channel

너비:: 3.5 mm

상표:: 인피니언 테크놀로지스

상품 유형:: MOSFET

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001556696

단위 무게:: 0.003951 oz

Tags: IRFL4315T, IRFL4315, IRFL43, IRFL4, IRFL, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFL4315TRPBF 설명

*** Source Electronics: Trans MOSFET N-CH 150V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 150V 2.6A SOT223

***ure Electronics: Single N-Channel 150 V 185 mOhm 12 nC HEXFET® Power Mosfet - SOT-223

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 150V,RDS(ON) 185 Milliohms,ID 2.6A,SOT-223,PD 2.8W,-55C

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

***roFlash: Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***nell: MOSFET, N, 150V, 2.6A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.185ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.6 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 30 / Fall Time ns = 19 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.8

***emi: Power MOSFET, N-Channel, QFET®, 60 V, 2.8 A, 140 mΩ, SOT-223

***ure Electronics: N-Channel 60 V 0.14 Ohm Surface Mount Mosfet - SOT-223

***Yang: Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***nell: MOSFET, N CH, 60V, 2.8A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.11ohm; Available until stocks are exhausted Alternative available

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ure Electronics: FDT86244 Series 150 V 128 mOhm N.Ch. SMT PowerTrench Mosfet - SOT-223-3

***emi: N-Channel Power Trench® MOSFET 150V, 2.8A, 128mΩ

***Yang: Trans MOSFET N-CH 150V 2.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

***nell: MOSFET, N CH, 150V, 2.8A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:4V

***va Crawler: P-channel -60 V, 0.13 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package

***ure Electronics: STN3P6F6 Series 60 V 130 mOhm P-Channel STripFET VI DeepGATE Mosfet - SOT-223

***ment14 APAC: MOSFET, P-CH, -60V, -3A, SOT-223-4; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Source Voltage Vds:-60V; On Resistance

***nell: MOSFET, P-CH, -60V, -3A, SOT-223-4; Transistor Polarity: P Channel; Continuous Drain Current Id: -3A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 2.6W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: DeepGATE STripFET VI Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

***emi: N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 2.8A, 160mΩ

*** Source Electronics: Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 60V 2.8A SOT-223

***ure Electronics: N-Channel 60 V 0.16 Ohm SMT Enhancement Mode Field Effect Transistor SOT-223

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:2.8A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

***ical: Trans MOSFET N-CH 60V 2.7A 4-Pin (3+Tab) SOT-223

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:2.7A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:SOT-223 ;RoHS Compliant: Yes

***nsix Microsemi: Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***nell: MOSFET, N, 60V, 2.7A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 2.7A; Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 120°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Pulse Current Idm: 22A; SMD Marking: LL014; Tape Width: 12mm; Voltage Vds Typ: 60V; Voltage Vgs Max: 10V; Voltage Vgs Rds on Measurement: 5V; Voltage Vgs th Max: 2V

Market price

부분 #	제조	설명	재고	가격
IRFL4315TRPBF DISTI # V72:2272_13890701	Infineon Technologies AG	Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R	1425	1000:$0.2484 500:$0.3274 250:$0.3309 100:$0.3498 25:$0.4709 10:$0.4943 1:$0.5815
IRFL4315TRPBF DISTI # IRFL4315TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 150V 2.6A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12418In Stock	1000:$0.4043 500:$0.4955 100:$0.6552 10:$0.8370 1:$0.9500
IRFL4315TRPBF DISTI # IRFL4315TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 2.6A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12418In Stock	1000:$0.4043 500:$0.4955 100:$0.6552 10:$0.8370 1:$0.9500
IRFL4315TRPBF DISTI # IRFL4315TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 150V 2.6A SOT223 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	2500:$0.3593
IRFL4315TRPBF DISTI # 31067823	Infineon Technologies AG	Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R	12500	2500:$0.2246
IRFL4315TRPBF DISTI # 30605107	Infineon Technologies AG	Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R	1460	100:$0.4921 50:$0.6018 29:$0.9040
IRFL4315TRPBF DISTI # 30331794	Infineon Technologies AG	Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R	1425	1000:$0.2484 500:$0.3274 250:$0.3309 100:$0.3498 28:$0.4709
IRFL4315TRPBF DISTI # IRFL4315TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: IRFL4315TRPBF) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 12500	2500:$0.2577 5000:$0.2471 7500:$0.2438 12500:$0.2343 25000:$0.2313 62500:$0.2255 125000:$0.2200
IRFL4315TRPBF DISTI # IRFL4315TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: IRFL4315TRPBF) RoHS: Compliant Min Qty: 1 Container: Reel	Americas - 0	1:$0.2329 10:$0.2299 25:$0.2259 50:$0.2229 100:$0.2149 500:$0.2079 1000:$0.2039
IRFL4315TRPBF DISTI # SP001556696	Infineon Technologies AG	Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: SP001556696) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.3399 5000:€0.2779 10000:€0.2549 15000:€0.2349 25000:€0.2179
IRFL4315TRPBF DISTI # 13AC9118	Infineon Technologies AG	MOSFET, N-CH, 150V, 2.6A, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.185ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes	4209	1:$0.8040 10:$0.6700 25:$0.5970 50:$0.5250 100:$0.4520 250:$0.4260 500:$0.4000 1000:$0.3730
IRFL4315TRPBF DISTI # 70018988	Infineon Technologies AG	IRFL4315TRPBF N-channel MOSFET Module,2.6 A,150 V,3 + Tab-Pin SOT-223 RoHS: Compliant	0	10:$0.8000
IRFL4315TRPBF	Infineon Technologies AG	Single N-Channel 150V 185 mOhm 12 nC HEXFET Power Mosfet - SOT-223 RoHS: Compliant	20000Reel	2500:$0.2500
IRFL4315TRPBF DISTI # 942-IRFL4315TRPBF	Infineon Technologies AG	MOSFET MOSFT 150V 2.6A 185mOhm 12nC RoHS: Compliant	2002	1:$0.7600 10:$0.6240 100:$0.4030 1000:$0.3230
IRFL4315TRPBF DISTI # 8655822P	Infineon Technologies AG	MOSFET N-CH 150V 2.6A HEXFET SMPS SOT223, RL	2580	250:£0.4110 500:£0.3630 1000:£0.3150 2500:£0.3090
IRFL4315TRPBF	International Rectifier		1649	1170:$0.5990 235:$0.6846 1:$1.7115
IRFL4315TRPBF DISTI # C1S322000491706	Infineon Technologies AG	Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	1845	250:$0.3317 100:$0.3432 25:$0.4784 10:$0.4806
IRFL4315TRPBF DISTI # C1S322000491715	Infineon Technologies AG	Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	1460	100:$0.3860 50:$0.4720 10:$0.7090
IRFL4315TRPBF DISTI # C1S322000491690	Infineon Technologies AG	Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	10000	2500:$0.3980
IRFL4315TRPBF DISTI # XSFP00000050504	Infineon Technologies AG	RoHS: Compliant	20190	2500:$0.5700 20190:$0.5182
IRFL4315TRPBF DISTI # 2725947	Infineon Technologies AG	MOSFET, N-CH, 150V, 2.6A, SOT-223 RoHS: Compliant	4209	1:$1.4500 10:$1.2800 100:$0.9820 500:$0.7280 1000:$0.5820
IRFL4315TRPBF DISTI # 2725947	Infineon Technologies AG	MOSFET, N-CH, 150V, 2.6A, SOT-223 RoHS: Compliant	4264	5:£0.4940 25:£0.4030 100:£0.3110 250:£0.2890 500:£0.2680

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IRFL4315TRPBF

유효성

참고 가격(USD)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes