SI7112DN-T1-GE3

SI7112DN-T1-GE3
Mfr. #:
SI7112DN-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI7112DN-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
PowerPAK-1212-8
상표명:
TrenchFET
포장:
키:
1.04 mm
길이:
3.3 mm
시리즈:
SI7
너비:
3.3 mm
상표:
비쉐이 / 실리콘닉스
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
부품 번호 별칭:
SI7112DN-GE3
Tags
SI7112DN-T, SI7112D, SI7112, SI711, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R
***ark
MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-8
***ment14 APAC
MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-
***i-Key
MOSFET N-CH 30V 11.3A 1212-8
***nell
MOSFET, N CH, 30V, 11.3A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
부분 # 제조 설명 재고 가격
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 11.3A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.7170
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 11.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.7913
  • 500:$1.0023
  • 100:$1.2924
  • 10:$1.6350
  • 1:$1.8500
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 11.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.7913
  • 500:$1.0023
  • 100:$1.2924
  • 10:$1.6350
  • 1:$1.8500
SI7112DN-T1-GE3
DISTI # SI7112DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7112DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.9749
  • 6000:$0.9459
  • 12000:$0.9069
  • 18000:$0.8819
  • 30000:$0.8579
SI7112DN-T1-GE3
DISTI # 69W7220
Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:600mV, RoHS Compliant: Yes0
  • 1:$2.0900
  • 25:$1.7300
  • 50:$1.5400
  • 100:$1.3400
  • 250:$1.2600
  • 500:$1.1800
  • 1000:$0.9720
SI7112DN-T1-GE3
DISTI # 33P5375
Vishay IntertechnologiesMOSFET, N CH, 30V, 11.3A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.9920
  • 3000:$0.9850
  • 6000:$0.9380
  • 12000:$0.8310
SI7112DN-T1-GE3
DISTI # 781-SI7112DN-T1-GE3
Vishay IntertechnologiesMOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
RoHS: Compliant
0
  • 1:$2.0900
  • 10:$1.7300
  • 100:$1.3400
  • 500:$1.1800
  • 1000:$0.9720
  • 3000:$0.9050
  • 6000:$0.8720
  • 9000:$0.8710
SI7112DN-T1-GE3
DISTI # 2459429
Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8
RoHS: Compliant
0
  • 3000:$3.8500
SI7112DN-T1-GE3
DISTI # 2459429
Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 11.3A, POWERPAK
RoHS: Compliant
0
  • 3000:£0.8540
영상 부분 # 설명
SI7112DN-T1-E3

Mfr.#: SI7112DN-T1-E3

OMO.#: OMO-SI7112DN-T1-E3

MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
SI7112DN-T1-GE3

Mfr.#: SI7112DN-T1-GE3

OMO.#: OMO-SI7112DN-T1-GE3

MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
SI7112DN-T1-GE3

Mfr.#: SI7112DN-T1-GE3

OMO.#: OMO-SI7112DN-T1-GE3-VISHAY

MOSFET N-CH 30V 11.3A 1212-8
SI7112DN-T1-E3-CUT TAPE

Mfr.#: SI7112DN-T1-E3-CUT TAPE

OMO.#: OMO-SI7112DN-T1-E3-CUT-TAPE-1190

신규 및 오리지널
SI7112DN

Mfr.#: SI7112DN

OMO.#: OMO-SI7112DN-1190

신규 및 오리지널
SI7112DN-T1

Mfr.#: SI7112DN-T1

OMO.#: OMO-SI7112DN-T1-1190

신규 및 오리지널
SI7112DN-T1-E3CT

Mfr.#: SI7112DN-T1-E3CT

OMO.#: OMO-SI7112DN-T1-E3CT-1190

신규 및 오리지널
SI7112DN-T1-GE3CT

Mfr.#: SI7112DN-T1-GE3CT

OMO.#: OMO-SI7112DN-T1-GE3CT-1190

신규 및 오리지널
SI7112DN-T1-E3

Mfr.#: SI7112DN-T1-E3

OMO.#: OMO-SI7112DN-T1-E3-VISHAY

MOSFET N-CH 30V 11.3A 1212-8
유효성
재고:
Available
주문 시:
1989
수량 입력:
SI7112DN-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.08
US$2.08
10
US$1.72
US$17.20
100
US$1.34
US$134.00
500
US$1.17
US$585.00
1000
US$0.97
US$971.00
시작
최신 제품
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