 | | | |
| PartNumber | SI7101DN-T1-GE3 | SI7102DN-T1-E3 | SI7102DN-T1-GE3 |
| Description | MOSFET -30V Vds 25V Vgs PowerPAK 1212-8 | MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 35 A | - | - |
| Rds On Drain Source Resistance | 7.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 68 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 52 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | 1.04 mm | 1.04 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | SI7 | SI7 | SI7 |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 44 S | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 38 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | - | SI7102DN-E3 | SI7102DN-GE3 |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7106DN-T1-GE3 | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 | |
| SI7108DN-T1-E3 | MOSFET 20V 22A 0.0049Ohm | ||
| SI7106DN-T1-E3 | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 | ||
| SI7108DN-T1-GE3 | MOSFET 20V 22A 3.8W 4.9mohm @ 10V | ||
| SI7104DN-T1-E3 | MOSFET 12V 35A | ||
| SI7104DN-T1-GE3 | MOSFET 12V 35A 52W 3.7mohm @ 4.5V | ||
| SI7101DN-T1-GE3 | MOSFET -30V Vds 25V Vgs PowerPAK 1212-8 | ||
| SI7110DN-T1-E3 | MOSFET 20V 21.1A 0.0053Ohm | ||
| SI7110DN-T1-GE3 | MOSFET 20V 21.1A 3.8W 5.3mohm @ 10V | ||
| SI7102DN-T1-E3 | MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3 | ||
| SI7102DN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3 | ||
| SI7107DN-T1-E3 | MOSFET RECOMMENDED ALT 781-SIS407DN-T1-GE3 | ||
| SI7111EDN-T1-GE3 | MOSFET -30V Vds 12V Vgs PowerPAK 1212-8 | ||
Vishay |
SI7107DN-T1-GE3 | IGBT Transistors MOSFET 20V 15.3A 3.8W 10.8mohm @ 4.5V | |
| SI7104DN-T1-GE3 | RF Bipolar Transistors MOSFET 12V 35A 52W 3.7mohm @ 4.5V | ||
| SI7100DN-T1-GE3 | RF Bipolar Transistors MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V | ||
| SI7100DN-T1-E3 | RF Bipolar Transistors MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V | ||
| SI7104DN-T1-E3 | RF Bipolar Transistors MOSFET 12V 35A | ||
| SI7101DN-T1-GE3 | MOSFET P-CH 30V 35A PPAK 1212-8 | ||
| SI7102DN-T1-E3 | MOSFET N-CH 12V 35A PPAK 1212-8 | ||
| SI7102DN-T1-GE3 | MOSFET N-CH 12V 35A 1212-8 | ||
| SI7106DN-T1-GE3 | MOSFET N-CH 20V 12.5A 1212-8 | ||
| SI7107DN-T1-E3 | MOSFET P-CH 20V 9.8A 1212-8 | ||
| SI7108DN-T1-GE3 | MOSFET N-CH 20V 14A 1212-8 | ||
| SI7110DN-T1-E3 | MOSFET N-CH 20V 13.5A 1212-8 | ||
| SI7110DN-T1-GE3 | MOSFET N-CH 20V 13.5A 1212-8 | ||
| SI7111EDN-T1-GE3 | MOSFET P-CH 30V 60A POWERPAK1212 | ||
| SI7106DN-T1-E3 | MOSFET N-CH 20V 12.5A 1212-8 | ||
| SI7108DN-T1-E3 | Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R | ||
| SI7106DN-T1-E3-CUT TAPE | 신규 및 오리지널 | ||
| SI7100 | 신규 및 오리지널 | ||
| SI7100A | 신규 및 오리지널 | ||
| SI7100DN | 신규 및 오리지널 | ||
| SI7101BWD | 신규 및 오리지널 | ||
| SI7102DN | 신규 및 오리지널 | ||
| SI7102DNTE1GE3 | 신규 및 오리지널 | ||
| SI7106 | 신규 및 오리지널 | ||
| SI7106DN | 신규 및 오리지널 | ||
| SI7106DN-TI-E3 | 신규 및 오리지널 | ||
| SI7106DNT1E3 | Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI7106JN-T1-GE3 | 신규 및 오리지널 | ||
| SI7107 | 신규 및 오리지널 | ||
| SI7108 | 신규 및 오리지널 | ||
| SI7108DN | 신규 및 오리지널 | ||
| SI7108DN-T1 | 신규 및 오리지널 | ||
| SI7108DN-TI-E3 | 신규 및 오리지널 | ||
| SI7110 | 신규 및 오리지널 | ||
| SI7110DN | 신규 및 오리지널 | ||
| SI7110DN-T1 | 신규 및 오리지널 | ||
| SI7112 | 신규 및 오리지널 |