SPD02N60C3

Mfr. #:: SPD02N60C3
제조사:: Rochester Electronics, LLC
설명:: Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SPD02N60C3 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 인피니언

제품 카테고리: FET - 단일

시리즈: CoolMOS C3

포장: 릴

부분 별칭: SP000308771 SPD02N60C3BTMA1 SPD02N60C3XT

단위 무게: 0.139332 oz

장착 스타일: SMD/SMT

상표명: 쿨모스

패키지 케이스: TO-252-3

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 25 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 12 ns

상승 시간: 3 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 1.8 A

Vds-드레인-소스-고장-전압: 600 V

Rds-On-Drain-Source-Resistance: 3 Ohms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 68 ns

일반 켜기 지연 시간: 6 ns

채널 모드: 상승

Tags: SPD02N60C3, SPD02N60C, SPD02N6, SPD02N, SPD02, SPD0, SPD

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPD02N60C3 설명

***ical: Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252 T/R

***p One Stop Global: Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252

***et Europe: Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R

***ark: Mosfet, N Channel, 650V, 1.8A, To-252-3

***i-Key: MOSFET N-CH 650V 1.8A DPAK

***ronik: N-CH 600V 1.8A 3000mOhm TO252-3

***ponent Sense: TRA POWER SPD02N60C3 DPAK-3

***et: LOW POWER_PRICE/PERFORM

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***nell: MOSFET, N, COOLMOS, D-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1.8A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):2.7ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:25W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Iar:1.8A; Corrente Id Max:1.8A; Corrente Idss Max:1µA; Corrente di Impulso Idm:5.4A; Dissipazione di Potenza Ptot Max:25W; Energia Max Avalanche Repetitiva:0.07mJ; Energia Singolo Impulso Avalanche Eas:50mJ; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Livello Temperatura a Piena Potenza:25°C; Modello Case Alternativo:D-PAK; No. di Transistor:1; Resistenza Stato On Max:3ohm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C

***ment14 APAC: Prices include import duty and tax. MOSFET, N, COOLMOS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:D-PAK; Avalanche Single Pulse Energy Eas:50mJ; Current Iar:1.8A; Current Id Max:1.8A; Current Idss Max:1µA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:3ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:25W; Pulse Current Idm:5.4A; Rate of Voltage Change dv / dt:50V/ns; Repetitive Avalanche Energy Max:0.07mJ; Termination Type:Surface Mount Device; Voltage Vds Typ:650V

Market price

부분 #	제조	설명	재고	가격
SPD02N60C3BTMA1 DISTI # 26943265	Infineon Technologies AG	Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	15000	10000:$0.4689 5000:$0.4909 2500:$0.5512
SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 1.8A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 1.8A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SPD02N60C3BTMA1 DISTI # C1S322000355848	Infineon Technologies AG	Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	15000	2500:$0.5440
SPD02N60C3BTMA1 DISTI # 59M2072	Infineon Technologies AG	MOSFET, N CHANNEL, 650V, 1.8A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):2.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0
SPD02N60C3	Infineon Technologies AG	Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	6	1000:$0.4400 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5400
SPD02N60C3 DISTI # 726-SPD02N60C3	Infineon Technologies AG	MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS C3 RoHS: Compliant	0
SPD02N60C3	Infineon Technologies AG	RoHS: Compliant	Europe - 445
SPD02N60C3BTMA1 DISTI # 1156419RL	Infineon Technologies AG	MOSFET, N, COOLMOS, D-PAK RoHS: Compliant	0	1:$1.5700 10:$1.3300 100:$1.0200 500:$0.8980 1000:$0.7080 2500:$0.6280 10000:$0.6040 25000:$0.6030
SPD02N60C3BTMA1 DISTI # 1156419	Infineon Technologies AG	MOSFET, N, COOLMOS, D-PAK RoHS: Compliant	0	1:$1.5700 10:$1.3300 100:$1.0200 500:$0.8980 1000:$0.7080 2500:$0.6280 10000:$0.6040 25000:$0.6030

관련 상품

영상	부분 #	설명
	Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: SPD02N60S5 OMO.#: OMO-SPD02N60S5-126	IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5
	Mfr.#: SPD02N50C3 OMO.#: OMO-SPD02N50C3-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
	Mfr.#: SPD02N80C3 OMO.#: OMO-SPD02N80C3-126	IGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3
	Mfr.#: SPD02N80C3BTMA1 OMO.#: OMO-SPD02N80C3BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 800V 2A TO-252
	Mfr.#: SPD02N50C3BTMA1 OMO.#: OMO-SPD02N50C3BTMA1-INFINEON-TECHNOLOGIES	LOW POWER_LEGACY
	Mfr.#: SPD02N60 OMO.#: OMO-SPD02N60-1190	신규 및 오리지널
	Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 1.8A DPAK
	Mfr.#: SPD02N80C3. OMO.#: OMO-SPD02N80C3--1190	신규 및 오리지널
	Mfr.#: SPD02U60C3 OMO.#: OMO-SPD02U60C3-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 3000
수량 입력:

SPD02N60C3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.60~~; ~~US$0.60~~

10: ~~US$0.57~~; ~~US$5.70~~

100: ~~US$0.54~~; ~~US$54.00~~

500: ~~US$0.51~~; ~~US$255.00~~

1000: ~~US$0.48~~; ~~US$480.00~~

시작

SPD02N60C3 5
SPD02N60C 6
SPD02N6 10
SPD02N 20
SPD02 21
SPD0 177
SPD 929

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SPD02N60C3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes