NSS40300DDR2G

Mfr. #:: NSS40300DDR2G
제조사:: ON Semiconductor
설명:: Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NSS40300DDR2G 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 온세미컨덕터

제품 카테고리: 트랜지스터(BJT) - 어레이

시리즈: NSS40300DD

포장: 테이프 및 릴(TR)

단위 무게: 0.005044 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

장착형: 표면 실장

공급자-장치-패키지: 8-SOIC

구성: 듀얼

파워맥스: 653mW

트랜지스터형: 2 PNP (Dual)

전류 수집기 Ic-Max: 3A

Voltage-Collector-Emitter-Breakdown-Max: 40V

DC-전류-이득-hFE-Min-Ic-Vce: 180 @ 1A, 2V

Vce-Saturation-Max-Ib-Ic: 170mV @ 200mA, 2A

전류 수집기 컷오프 최대: 100nA (ICBO)

주파수 전환: 100MHz

Pd 전력 손실: 783 mW

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

컬렉터-이미터-전압-VCEO-최대: - 40 V

트랜지스터 극성: PNP

컬렉터-이미터-포화-전압: 0.135 V

컬렉터-베이스-전압-VCBO: - 40 V

이미 터-베이스-전압-VEBO: - 7 V

최대 DC 수집기 전류: - 6 A

이득-대역폭-곱-fT: 100 MHz

연속 수집기 전류: - 3 A

DC-수집기-베이스-이득-hfe-Min: 250

DC-전류-이득-hFE-최대: 250 at 10 mA at 2 V

Tags: NSS40300, NSS403, NSS40, NSS4, NSS

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NSS40300DDR2G 설명

***et Europe: Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R

***th Star Micro: ON Semiconductors e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

Market price

부분 #	제조	설명	재고	가격
NSS40300DDR2G DISTI # NSS40300DDR2GOSCT-ND	ON Semiconductor	TRANS 2PNP 40V 3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2445In Stock	1000:$0.3288 500:$0.4110 100:$0.5199 10:$0.6780 1:$0.7700
NSS40300DDR2G DISTI # NSS40300DDR2GOSDKR-ND	ON Semiconductor	TRANS 2PNP 40V 3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2445In Stock	1000:$0.3288 500:$0.4110 100:$0.5199 10:$0.6780 1:$0.7700
NSS40300DDR2G DISTI # NSS40300DDR2GOSTR-ND	ON Semiconductor	TRANS 2PNP 40V 3A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	12500:$0.2660 5000:$0.2693 2500:$0.2893
NSS40300DDR2G DISTI # NSS40300DDR2G	ON Semiconductor	Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R (Alt: NSS40300DDR2G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2399 15000:€0.2589 10000:€0.2799 5000:€0.3059 2500:€0.3739
NSS40300DDR2G DISTI # NSS40300DDR2G	ON Semiconductor	Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Bulk (Alt: NSS40300DDR2G) RoHS: Compliant Min Qty: 1191 Container: Bulk	Americas - 0	11910:$0.2589 5955:$0.2649 3573:$0.2689 2382:$0.2719 1191:$0.2739
NSS40300DDR2G DISTI # NSS40300DDR2G	ON Semiconductor	Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Tape and Reel (Alt: NSS40300DDR2G) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2339 15000:$0.2399 10000:$0.2429 5000:$0.2459 2500:$0.2479
NSS40300DDR2G DISTI # 863-NSS40300DDR2G	ON Semiconductor	Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP RoHS: Compliant	5043	1:$0.7100 10:$0.5890 100:$0.3800 1000:$0.3040 2500:$0.2570 10000:$0.2480 25000:$0.2380
NSS40300DDR2G	ON Semiconductor	Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon RoHS: Compliant	54821	1000:$0.2800 500:$0.2900 100:$0.3000 25:$0.3200 1:$0.3400
NSS40300DDR2G	ON Semiconductor		449
NSS40300DDR2G	ON Semiconductor	Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor	398	1:$0.4400 100:$0.3400 500:$0.3100 1000:$0.2900

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