GS66508P-E05-MR

GS66508P-E05-MR
Mfr. #:
GS66508P-E05-MR
제조사:
GaN Systems
설명:
MOSFET 650V 30A E-Mode GaN
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
GS66508P-E05-MR 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
GS66508P-E05-MR 추가 정보
제품 속성
속성 값
제조사
GaN 시스템
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
장착 스타일
SMD/SMT
기술
GaN
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
Vgs 게이트 소스 전압
10 V
Vds-드레인-소스-고장-전압
650 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Resistance
55 mOhms
트랜지스터 극성
N-채널
Qg-Gate-Charge
6.5 nC
채널 모드
상승
Tags
GS66508P, GS66508, GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
부분 # 제조 설명 재고 가격
GS66508P-E05-MR
DISTI # 499-GS66508P-E05-MR
GaN SystemsMOSFET 650V 30A E-Mode GaN
RoHS: Compliant
0
  • 1:$23.4600
  • 10:$22.7000
  • 25:$21.6500
  • 250:$20.1100
영상 부분 # 설명
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR

MOSFET 650V 30A E-Mode GaN
GS66508B-EVBDB

Mfr.#: GS66508B-EVBDB

OMO.#: OMO-GS66508B-EVBDB-1190

Power Management IC Development Tools GS66508B Half Bridge Daughter Board
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508T-E02

Mfr.#: GS66508T-E02

OMO.#: OMO-GS66508T-E02-1190

신규 및 오리지널
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-TY

Mfr.#: GS66508P-E05-TY

OMO.#: OMO-GS66508P-E05-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508P-E04-TY

Mfr.#: GS66508P-E04-TY

OMO.#: OMO-GS66508P-E04-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508T-E01-TY

Mfr.#: GS66508T-E01-TY

OMO.#: OMO-GS66508T-E01-TY-128

MOSFET Top cooled 650V GaN Transisto
유효성
재고:
Available
주문 시:
5500
수량 입력:
GS66508P-E05-MR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$30.16
US$30.16
10
US$28.66
US$286.57
100
US$27.15
US$2 714.85
500
US$25.64
US$12 820.15
1000
US$24.13
US$24 132.00
시작
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