GS66508P-E05-MR

GS66508P-E05-MR
Mfr. #:
GS66508P-E05-MR
제조사:
GaN Systems
설명:
MOSFET 650V 30A E-Mode GaN
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
GS66508P-E05-MR 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
GS66508P-E05-MR 추가 정보
제품 속성
속성 값
제조사:
GaN 시스템
제품 카테고리:
MOSFET
RoHS:
Y
기술:
GaN
장착 스타일:
SMD/SMT
패키지/케이스:
GaNPX-4
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
30 A
Rds On - 드레인 소스 저항:
55 mOhms
Vgs th - 게이트 소스 임계 전압:
1.7 V
Vgs - 게이트 소스 전압:
7 V
Qg - 게이트 차지:
5.8 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
구성:
하나의
채널 모드:
상승
포장:
키:
0.51 mm
길이:
10 mm
제품:
MOSFET
시리즈:
GS6650x
트랜지스터 유형:
1 N-Channel
너비:
8.7 mm
상표:
GaN 시스템
습기에 민감한:
상품 유형:
MOSFET
공장 팩 수량:
250
하위 카테고리:
MOSFET
부품 번호 별칭:
GS66508P-E05-MR
Tags
GS66508P, GS66508, GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
부분 # 제조 설명 재고 가격
GS66508P-E05-MR
DISTI # 499-GS66508P-E05-MR
GaN SystemsMOSFET 650V 30A E-Mode GaN
RoHS: Compliant
0
  • 1:$23.4600
  • 10:$22.7000
  • 25:$21.6500
  • 250:$20.1100
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ICM7555CBAZ-T

Mfr.#: ICM7555CBAZ-T

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Mfr.#: GS61008P-E05-MR

OMO.#: OMO-GS61008P-E05-MR

MOSFET 100V 80A E-Mode GaN
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

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MOSFET 650V Enhancement Mode Transistor
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

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Mfr.#: GS66516T-E02-MR

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LMG1020YFFR

Mfr.#: LMG1020YFFR

OMO.#: OMO-LMG1020YFFR

Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
ICM7555CBAZ-T

Mfr.#: ICM7555CBAZ-T

OMO.#: OMO-ICM7555CBAZ-T-INTERSIL

신규 및 오리지널
LM5114BMF/NOPB

Mfr.#: LM5114BMF/NOPB

OMO.#: OMO-LM5114BMF-NOPB-TEXAS-INSTRUMENTS

Gate Drivers Sgl 7.6A Peak Crnt Low Side Gate Drive
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR-1190

MOSFET 650V Enhancement Mode Transisto
유효성
재고:
404
주문 시:
2387
수량 입력:
GS66508P-E05-MR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$23.46
US$23.46
10
US$22.70
US$227.00
25
US$21.65
US$541.25
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
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