IRF1010ESPBF

Mfr. #:: IRF1010ESPBF
제조사:: Infineon Technologies AG
설명:: MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF1010ESPBF 데이터 시트
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ECAD Model:

제품 속성
속성 값

Tags: IRF1010ES, IRF1010E, IRF1010, IRF101, IRF10, IRF1, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF1010ESPBF 설명

***ical: Trans MOSFET N-CH 60V 84A 3-Pin (2+Tab) D2PAK

***ernational Rectifier: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

***(Formerly Allied Electronics): MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***ment14 APAC: MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:84A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

*** Electronics: In a Tube of 50, IRF1010NSPBF N-Channel MOSFET, 85 A, 55 V HEXFET, 3-Pin D2PAK Infineon

***ure Electronics: Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

*** Source Electronics: Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 55V 85A D2PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, 55V, 84A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dis

***(Formerly Allied Electronics): IRF1010EZSPBF N-channel MOSFET Transistor; 84 A; 60 V; 3-Pin D2PAK

***ure Electronics: Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***ow.cn: Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(2+Tab) D2PAK T/R

***roFlash: Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:75A; On Resistance Rds(On):0.0068Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ure Electronics: Single N-Channel 75 V 0.0078 Ohm 250 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, 75V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:70A; Cont Current Id @ 25°C:100A; Current Id Max:100A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:3.8W; Pulse Current Idm:520A; Rth:0.75; Termination Type:SMD; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***icroelectronics: N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET

***Yang: Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ure Electronics: N-Channel 60 V 0.016 Ohm Surface Mount STripFET II Power MosFet - D2PAK

***ment14 APAC: MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:360mJ; Capacitance Ciss Typ:1810pF; Current Iar:30A; Current Id Max:60A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; On State resistance @ Vgs = 10V:16mohm; Package / Case:D2-PAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:240A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***ical: Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***icroelectronics: Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET II Power MOSFET in D2PAK package

***r Electronics: Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 55V, 80A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in D2PAK package

***ical: Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R

***ark: MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:80A; Resistance, Rds On:0.0085ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 80A; On State resistance @ Vgs = 10V: 8.5mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 320A; SMD Marking: 60N55F3; Termination Type: Surface Mount Device; Voltage Vds Typ: 55V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

Market price

부분 #	제조	설명	재고	가격
IRF1010ESPBF DISTI # 70018155	Infineon Technologies AG	MOSFET,60V,83A,12 MOHM,86.6 NC QG,D2-PAK RoHS: Compliant	0	500:$2.4500 1000:$2.4010 2500:$2.3280 5000:$2.2300 12500:$2.0830
IRF1010ESPBF DISTI # 942-IRF1010ESPBF	Infineon Technologies AG	MOSFET 60V SGL N-CH HEXFET Pwr MOSFET RoHS: Compliant	0
IRF1010ESPBF	International Rectifier		7400
IRF1010ESPBF	International Rectifier	RoHS: Compliant	18
IRF1010ESPBF DISTI # 8657319	Infineon Technologies AG	MOSFET, N, 60V, 84A, D2-PAK RoHS: Compliant	0	2500:$0.8090 1000:$0.8640 500:$0.8940 250:$0.9620 100:$1.0800 25:$1.2100 10:$1.5000 1:$1.8200

영상	부분 #	설명
	Mfr.#: IRF1010EZPBF OMO.#: OMO-IRF1010EZPBF	MOSFET MOSFT 60V 84A 8.5mOhm 58nC
	Mfr.#: IRF1010EZSTRLP-CUT TAPE OMO.#: OMO-IRF1010EZSTRLP-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: IRF1010ZSTRLPBF-CUT TAPE OMO.#: OMO-IRF1010ZSTRLPBF-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: IRF1010EL OMO.#: OMO-IRF1010EL-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 84A TO-262
	Mfr.#: IRF1010BSTRLPBF OMO.#: OMO-IRF1010BSTRLPBF-1190	신규 및 오리지널
	Mfr.#: IRF1010EPBF OMO.#: OMO-IRF1010EPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 84A TO-220AB
	Mfr.#: IRF1010EPBF,F1010E,IRF10 OMO.#: OMO-IRF1010EPBF-F1010E-IRF10-1190	신규 및 오리지널
	Mfr.#: IRF1010ES OMO.#: OMO-IRF1010ES-1190	POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 60V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
	Mfr.#: IRF1010ZSPBF OMO.#: OMO-IRF1010ZSPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 55V 75A D2PAK
	Mfr.#: IRF1010ESTRLPBF OMO.#: OMO-IRF1010ESTRLPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 84A D2PAK

IRF1010ESPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes