 |  |  | |
| PartNumber | IRF1010ESTRLPBF | IRF1010EPBF | IRF1010EL |
| Description | MOSFET MOSFT 60V 83A 12mOhm 86.6nC | MOSFET MOSFT 60V 81A 12mOhm 86.6nC | MOSFET N-CH 60V 84A TO-262 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-252-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 84 A | 81 A | - |
| Rds On Drain Source Resistance | 12 mOhms | 12 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 130 nC | 86.6 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 200 W | 170 W | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Tube | - |
| Height | 2.3 mm | 15.65 mm | - |
| Length | 6.5 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 4.4 mm | - |
| Brand | Infineon / IR | Infineon Technologies | - |
| Forward Transconductance Min | 69 S | - | - |
| Fall Time | 53 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 78 ns | - | - |
| Factory Pack Quantity | 800 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 48 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | SP001553824 | SP001569818 | - |
| Unit Weight | 0.139332 oz | 0.211644 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF1010EZPBF | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | |
| IRF1010EZSTRLP | MOSFET N-CH 60V 75A D2PAK | ||
| IRF1010EL | MOSFET N-CH 60V 84A TO-262 | ||
| IRF1010ESTRR | MOSFET N-CH 60V 84A D2PAK | ||
| IRF1010EZ | MOSFET N-CH 60V 75A TO-220AB | ||
| IRF1010EPBF | MOSFET N-CH 60V 84A TO-220AB | ||
| IRF1010EZL | MOSFET N-CH 60V 75A TO-262 | ||
| IRF1010EZS | MOSFET N-CH 60V 75A D2PAK | ||
| IRF1010EZSPBF | MOSFET N-CH 60V 75A D2PAK | ||
| IRF1010ESTRLPBF | MOSFET N-CH 60V 84A D2PAK | ||
| IRF1010EZPBF | MOSFET N-CH 60V 75A TO-220AB | ||
| IRF1010EZLPBF | IGBT Transistors MOSFET MOSFT 60V 84A 8.5mOhm 58nC | ||
Infineon / IR |
IRF1010EZSTRLP | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | |
| IRF1010ESTRLPBF | MOSFET MOSFT 60V 83A 12mOhm 86.6nC | ||
Infineon Technologies |
IRF1010EPBF | MOSFET MOSFT 60V 81A 12mOhm 86.6nC | |
| IRF1010ESTRLPBF-CUT TAPE | 신규 및 오리지널 | ||
| IRF1010EZSTRLP-CUT TAPE | 신규 및 오리지널 | ||
| IRF1010E | MOSFET Transistor, N-Channel, TO-220AB | ||
| IRF1010E,IRF1010EPBF | 신규 및 오리지널 | ||
| IRF1010E,IRF3808PBF,IRF1 | 신규 및 오리지널 | ||
| IRF1010EPBF , MM3Z5V1B | 신규 및 오리지널 | ||
| IRF1010EPBF IRF1010E | 신규 및 오리지널 | ||
| IRF1010EPBF,F1010E,IRF10 | 신규 및 오리지널 | ||
| IRF1010EPBF,IRF1010E, | 신규 및 오리지널 | ||
| IRF1010EPBF-M | 신규 및 오리지널 | ||
| IRF1010EPBF-MXG | 신규 및 오리지널 | ||
| IRF1010ES | POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 60V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| IRF1010ESPBF | MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK | ||
| IRF1010EZLPBF. | 신규 및 오리지널 | ||
| IRF1010EZPBF. | 신규 및 오리지널 | ||
| IRF1010EZSPBF,IRF1010EZS | 신규 및 오리지널 | ||
| IRF1010EZSPBF,IRF1010EZSTRLPBF,F1010EZS | 신규 및 오리지널 | ||
| IRF1010EZSTRLPBF | 신규 및 오리지널 |