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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI4894BDY-T1-E3 DISTI # V72:2272_09216628 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R RoHS: Compliant | 10 |
|
| SI4894BDY-T1-E3 DISTI # V36:1790_09216628 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI4894BDY-T1-E3 DISTI # SI4894BDY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 8.9A 8-SOIC Min Qty: 1 Container: Cut Tape (CT) | 4972In Stock |
|
| SI4894BDY-T1-E3 DISTI # SI4894BDY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 8.9A 8-SOIC Min Qty: 1 Container: Digi-Reel® | 4972In Stock |
|
| SI4894BDY-T1-E3 DISTI # SI4894BDY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 8.9A 8-SOIC Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4894BDY-T1-E3 DISTI # SI4894BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4894BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4894BDY-T1-E3 DISTI # SI4894BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R (Alt: SI4894BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| SI4894BDY-T1-E3 DISTI # 57J5682 | Vishay Intertechnologies | MOSFET Transistor, N Channel, 12 A, 30 V, 0.009 ohm, 10 V, 3 V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SI4894BDY-T1-E3 DISTI # 65K1934 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 12A,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Power Dissipation Pd:3WRoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SI4894BDY-T1-E3 DISTI # 781-SI4894BDY-E3 | Vishay Intertechnologies | MOSFET 30V 12V 1.4W RoHS: Compliant | 4806 |
|
| SI4894BDY-T1-E3 | Vishay Intertechnologies | MOSFET 30V 12V 1.4W | Americas - | |
| SI4894BDY-T1-E3 | Vishay Intertechnologies | 2923 | ||
| SI4894BDY-T1-E3 | Vishay Siliconix | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2180 |
|
| SI4894BDY-T1-E3-PBF | Vishay Intertechnologies | 1674 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: SI4894DY OMO.#: OMO-SI4894DY-1190 |
MOSFET 30V 12.5A 3W |
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Mfr.#: SI4894DY-T1 OMO.#: OMO-SI4894DY-T1-1190 |
신규 및 오리지널 |
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Mfr.#: SI4894DY-T1-E3 OMO.#: OMO-SI4894DY-T1-E3-1190 |
신규 및 오리지널 |
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Mfr.#: SI4894DY-T1-GE3 OMO.#: OMO-SI4894DY-T1-GE3-1190 |
신규 및 오리지널 |
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Mfr.#: SI4894DYT1 OMO.#: OMO-SI4894DYT1-1190 |
신규 및 오리지널 |
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Mfr.#: SI4894DYT1E3 OMO.#: OMO-SI4894DYT1E3-1190 |
신규 및 오리지널 |