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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI4894BDY-T1-GE3 DISTI # V72:2272_09216630 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R RoHS: Compliant | 0 | |
| SI4894BDY-T1-GE3 DISTI # V36:1790_09216630 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI4894BDY-T1-GE3 DISTI # SI4894BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 8.9A 8-SOIC Min Qty: 1 Container: Cut Tape (CT) | 603In Stock |
|
| SI4894BDY-T1-GE3 DISTI # SI4894BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 8.9A 8-SOIC Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI4894BDY-T1-GE3 DISTI # SI4894BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 8.9A 8-SOIC Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI4894BDY-T1-GE3 DISTI # SI4894BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4894BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4894BDY-T1-GE3 DISTI # 15R5111 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 12A,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SI4894BDY-T1-GE3 DISTI # 26R1892 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 12A,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SI4894BDY-T1-GE3 DISTI # 781-SI4894BDY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V 12A 2.5W 11mohm @ 10V RoHS: Compliant | 232 |
|
| SI4894BDY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V 12A 2.5W 11mohm @ 10V | Americas - | |
| SI4894BDY-T1-GE3 | Vishay Siliconix | 2053 | ||
| SI4894BDY-T1-GE3 | Vishay Intertechnologies | 4084 | ||
| SI4894BDY-T1-GE3 DISTI # 1871358 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 12A RoHS: Compliant | 0 |
|
| SI4894BDYT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 8.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2500 |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: SI4894BDY-T1-E3-CUT TAPE |
신규 및 오리지널 |
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Mfr.#: SI4894BDY OMO.#: OMO-SI4894BDY-1190 |
신규 및 오리지널 |
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Mfr.#: SI4894BDY-T1 OMO.#: OMO-SI4894BDY-T1-1190 |
신규 및 오리지널 |
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Mfr.#: SI4894BDY-T1-E3. OMO.#: OMO-SI4894BDY-T1-E3--1190 |
신규 및 오리지널 |
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Mfr.#: SI4894BDY-T1-GE3 OMO.#: OMO-SI4894BDY-T1-GE3-VISHAY |
MOSFET N-CH 30V 8.9A 8-SOIC |
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Mfr.#: SI4894BDY-TI-E3 OMO.#: OMO-SI4894BDY-TI-E3-1190 |
신규 및 오리지널 |
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Mfr.#: SI4894DY OMO.#: OMO-SI4894DY-1190 |
MOSFET 30V 12.5A 3W |
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Mfr.#: SI4894DY-T1 OMO.#: OMO-SI4894DY-T1-1190 |
신규 및 오리지널 |
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Mfr.#: SI4894DY-T1-E3 OMO.#: OMO-SI4894DY-T1-E3-1190 |
신규 및 오리지널 |
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Mfr.#: SI4894DYT1 OMO.#: OMO-SI4894DYT1-1190 |
신규 및 오리지널 |