TGF2023-2-20

TGF2023-2-20
Mfr. #:
TGF2023-2-20
제조사:
Qorvo
설명:
RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
TGF2023-2-20 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
TGF2023-2-20 추가 정보
제품 속성
속성 값
제조사:
코르보
제품 카테고리:
RF JFET 트랜지스터
RoHS:
Y
트랜지스터 유형:
헴트
기술:
GaN SiC
얻다:
21 dB
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
50 V
Vgs - 게이트 소스 항복 전압:
145 V
Id - 연속 드레인 전류:
1.46 A
출력 파워:
8.7 W
최대 드레인 게이트 전압:
55 V
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 85 C
Pd - 전력 손실:
13 W
장착 스타일:
SMD/SMT
패키지/케이스:
SMD-8
포장:
동작 주파수:
30 MHz to 1200 MHz
시리즈:
QPD1011
상표:
코르보
순방향 트랜스컨덕턴스 - 최소:
-
개발 키트:
QPD1011EVB01
습기에 민감한:
상품 유형:
RF JFET 트랜지스터
공장 팩 수량:
100
하위 카테고리:
트랜지스터
부품 번호 별칭:
QPD1011
Tags
TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0 to 18 GHz, 90 W, 11.1 dB, 28 V, GaN
***S
new, original packaged
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
부분 # 제조 설명 재고 가격
TGF2023-2-20
DISTI # 772-TGF2023-2-20
QorvoRF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
RoHS: Compliant
0
  • 50:$147.8300
영상 부분 # 설명
TGF2025

Mfr.#: TGF2025

OMO.#: OMO-TGF2025

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OMO.#: OMO-TGF2023-2-05

RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2023-2-01

Mfr.#: TGF2023-2-01

OMO.#: OMO-TGF2023-2-01-318

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TGF2021-01

Mfr.#: TGF2021-01

OMO.#: OMO-TGF2021-01-318

RF JFET Transistors DC-12GHz 1mm Pwr pHEMT (0.35um)
TGF2021-04-SD-T/R

Mfr.#: TGF2021-04-SD-T/R

OMO.#: OMO-TGF2021-04-SD-T-R-1190

신규 및 오리지널
TGF2021-04-SD.

Mfr.#: TGF2021-04-SD.

OMO.#: OMO-TGF2021-04-SD--1190

신규 및 오리지널
TGF2021-04-SG

Mfr.#: TGF2021-04-SG

OMO.#: OMO-TGF2021-04-SG-1152

RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 4 dBm
TGF2022-2

Mfr.#: TGF2022-2

OMO.#: OMO-TGF2022-2-1190

신규 및 오리지널
TGF2023-10

Mfr.#: TGF2023-10

OMO.#: OMO-TGF2023-10-1152

RF JFET Transistors 10mm GaN Discrete
TGF2023-20

Mfr.#: TGF2023-20

OMO.#: OMO-TGF2023-20-1152

RF JFET Transistors 20mm GaN Discrete
유효성
재고:
Available
주문 시:
4000
수량 입력:
TGF2023-2-20의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
50
US$147.83
US$7 391.50
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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