IPB60R125CP

IPB60R125CP
Mfr. #:
IPB60R125CP
제조사:
Infineon Technologies
설명:
Darlington Transistors MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB60R125CP 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
추가 정보:
IPB60R125CP 추가 정보
제품 속성
속성 값
제조사
인피니언
제품 카테고리
FET - 단일
시리즈
쿨모스 CP
포장
부분 별칭
IPB60R125CPATMA1 IPB60R125CPXT SP000297368
단위 무게
0.139332 oz
장착 스타일
SMD/SMT
상표명
쿨모스
패키지 케이스
TO-252-3
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
208 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
가을철
5 ns
상승 시간
5 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
25 A
Vds-드레인-소스-고장-전압
600 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V
Rds-On-Drain-Source-Resistance
125 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
50 ns
일반 켜기 지연 시간
15 ns
Qg-Gate-Charge
53 nC
채널 모드
상승
Tags
IPB60R125CP, IPB60R125, IPB60R12, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
부분 # 제조 설명 재고 가격
IPB60R125CPATMA1
DISTI # IPB60R125CPATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 600V 25A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
76In Stock
  • 500:$4.1357
  • 100:$5.1073
  • 10:$6.2280
  • 1:$6.9800
IPB60R125CPATMA1
DISTI # IPB60R125CPATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 600V 25A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
76In Stock
  • 500:$4.1357
  • 100:$5.1073
  • 10:$6.2280
  • 1:$6.9800
IPB60R125CPATMA1
DISTI # IPB60R125CPATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 25A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$3.3863
IPB60R125CP
DISTI # IPB60R125CP
Infineon Technologies AGTrans MOSFET N-CH 650V 25A 3-Pin TO-263 T/R (Alt: IPB60R125CP)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 5000
  • 1000:$3.6648
  • 2000:$3.4903
  • 3000:$3.4358
  • 5000:$3.2819
  • 10000:$3.2337
  • 25000:$3.1413
  • 50000:$3.0540
IPB60R125CP
DISTI # SP000297368
Infineon Technologies AGTrans MOSFET N-CH 650V 25A 3-Pin TO-263 T/R (Alt: SP000297368)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€2.9900
  • 2000:€2.8900
  • 4000:€2.7900
  • 6000:€2.5900
  • 10000:€2.3900
IPB60R125CPXT
DISTI # IPB60R125CPATMA1
Infineon Technologies AGTrans MOSFET N-CH 600V 25A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R125CPATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.0900
  • 2000:$2.9900
  • 4000:$2.8900
  • 6000:$2.7900
  • 10000:$2.6900
IPB60R125CPATMA1
DISTI # 33P7133
Infineon Technologies AGMOSFET, N CHANNEL, 650V, 25A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.11ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
  • 1:$5.8300
  • 10:$4.9500
  • 25:$4.7300
  • 50:$4.5100
  • 100:$4.2900
  • 250:$4.0700
  • 500:$3.6600
IPB60R125CPATMA1
DISTI # 726-IPB60R125CPATMA1
Infineon Technologies AGMOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
RoHS: Compliant
0
  • 1:$5.8300
  • 10:$4.9500
  • 100:$4.2900
  • 250:$4.0700
  • 500:$3.6600
  • 1000:$3.0800
IPB60R125CP
DISTI # 726-IPB60R125CP
Infineon Technologies AGMOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
RoHS: Compliant
0
    IPB60R125CP
    DISTI # TMOSP9719
    Infineon Technologies AGCoolMOS 600V25A 125mOhm TO263
    RoHS: Compliant
    Stock DE - 0Stock US - 0
    • 1000:$4.5900
    IPB60R125CPInfineon Technologies AGINSTOCK594
      IPB60R125CPATMA1
      DISTI # 1664016
      Infineon Technologies AGMOSFET, N, TO-263
      RoHS: Compliant
      0
      • 1:£4.9300
      • 10:£3.7900
      • 100:£3.2800
      • 250:£3.1100
      • 500:£2.8000
      IPB60R125CPInfineon Technologies AG600V,25A,N-Channel MOSFET500
      • 1:$4.8300
      • 100:$4.0300
      • 500:$3.5500
      • 1000:$3.4500
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      Mfr.#: IPB60R180P7ATMA1-CUT TAPE

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      신규 및 오리지널
      IPB60R125C6ATMA1

      Mfr.#: IPB60R125C6ATMA1

      OMO.#: OMO-IPB60R125C6ATMA1-INFINEON-TECHNOLOGIES

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      신규 및 오리지널
      IPB60R385CPXT

      Mfr.#: IPB60R385CPXT

      OMO.#: OMO-IPB60R385CPXT-1190

      신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      4500
      수량 입력:
      IPB60R125CP의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$2.19
      US$2.19
      10
      US$2.08
      US$20.84
      100
      US$1.97
      US$197.48
      500
      US$1.87
      US$932.55
      1000
      US$1.76
      US$1 755.40
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