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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI2316DS-T1-E3 DISTI # V72:2272_09216800 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R RoHS: Compliant | 151 |
|
| SI2316DS-T1-GE3 DISTI # V36:1790_09216801 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R RoHS: Compliant | 0 |
|
| SI2316DS-T1-E3 DISTI # V36:1790_09216800 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R RoHS: Compliant | 0 |
|
| SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 2.9A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 39083In Stock |
|
| SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 2.9A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 39083In Stock |
|
| SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 2.9A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 36000In Stock |
|
| SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3-ND | Vishay Siliconix | MOSFET N-CH 30V 2.9A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI2316DS-T1-E3 DISTI # 25790283 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R RoHS: Compliant | 151 |
|
| SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R (Alt: SI2316DS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2316DS-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI2316DS-T1-E3 DISTI # SI2316DS-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin TO-236 T/R (Alt: SI2316DS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R (Alt: SI2316DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2316DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI2316DS-T1-E3 DISTI # 85W2139 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:960mW,No. of Pins:3Pins RoHS Compliant: Yes | 0 |
|
| SI2316DS-T1-E3. DISTI # 15AC0292 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:700mW,No. of Pins:3Pins RoHS Compliant: No | 0 |
|
| SI2316DS-T1-GE3 DISTI # 12R3248 | Vishay Intertechnologies | N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:960mW RoHS Compliant: Yes | 0 |
|
| SI2316DS-T1 DISTI # 781-SI2316DS | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2316BDS-E3 RoHS: Compliant | 0 | |
| SI2316DS-T1-E3 DISTI # 781-SI2316DS-T1-E3 | Vishay Intertechnologies | MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant | 3346 |
|
| SI2316DS-T1-GE3 DISTI # 781-SI2316DS-GE3 | Vishay Intertechnologies | MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant | 0 |
|
| SI2316DS-T1 | Vishay Siliconix | 2004 | ||
| SI2316DS-T1-E3 | Vishay Siliconix | 5314 | ||
| SI2316DS-T1-E3 | Vishay Semiconductors | 12392 |
| |
| SI2316DS-T1-E3 | Vishay Siliconix | 15490 |
| |
| SI2316DS-T1-GE3 | Vishay Intertechnologies | 2629 | ||
| SI2316DS-T1-E3 DISTI # TMOS1381 | Vishay Intertechnologies | N-CH 30V 2,9A 50mOhm SOT-23 RoHS: Compliant | Stock DE - 0Stock HK - 0Stock US - 0 |
|
| SI2316DST1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant | 1770 | |
| SI2316DS-T1-E3 | Vishay Intertechnologies | MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant | Americas - | |
| SI2316DS-T1-GE3 | Vishay Intertechnologies | MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant | Americas - |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI2318DS-T1-E3 OMO.#: OMO-SI2318DS-T1-E3 |
MOSFET 40V 6A |
|
|
Mfr.#: SI2318CDS-T1-GE3 OMO.#: OMO-SI2318CDS-T1-GE3 |
MOSFET 40V Vds 20V Vgs SOT-23 |
|
|
Mfr.#: SI2314EDS-T1-E3 OMO.#: OMO-SI2314EDS-T1-E3 |
MOSFET N-CHANNEL 20-V (D-S) MOSFET |
|
Mfr.#: SI2310DS-T1-E3 OMO.#: OMO-SI2310DS-T1-E3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI2312CDS-T1-E3 OMO.#: OMO-SI2312CDS-T1-E3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI2313DS OMO.#: OMO-SI2313DS-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI2315DS OMO.#: OMO-SI2315DS-1190 |
3.5 A, 12 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236 |
|
Mfr.#: SI2316BDS-T1-GE3 OMO.#: OMO-SI2316BDS-T1-GE3-VISHAY |
MOSFET N-CH 30V 4.5A SOT23-3 |
|
|
Mfr.#: SI2319DS-T1 OMO.#: OMO-SI2319DS-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI2319DS-T1-E3 |
|
|
Mfr.#: SI2319CDS-T1-GE3-CUT TAPE |
신규 및 오리지널 |