SI2309DS-T1-E3

SI2309DS-T1-E3
Mfr. #:
SI2309DS-T1-E3
제조사:
Vishay / Siliconix
설명:
MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI2309DS-T1-E3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2309DS-T1-E3 DatasheetSI2309DS-T1-E3 Datasheet (P4-P5)
ECAD Model:
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
SOT-23-3
상표명:
TrenchFET
포장:
키:
1.45 mm
길이:
2.9 mm
시리즈:
SI2
너비:
1.6 mm
상표:
비쉐이 / 실리콘닉스
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
부품 번호 별칭:
SI2309DS-E3
단위 무게:
0.000282 oz
Tags
SI2309DS-T1, SI2309DS-T, SI2309D, SI2309, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***C
Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23 Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23
***ied Electronics & Automation
MOSFET, Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-1.25A; On Resistance, Rds(on):0.55ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SOT-23 ;RoHS Compliant: Yes
***nell
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:1.25A; Resistance, Rds On:0.34ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:8A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; Resistance, Rds on Max:0.34ohm; SMD Marking:A9; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Max:-1V; Width, External:3.05mm; Width, Tape:8mm
부분 # 제조 설명 재고 가격
SI2309DS-T1-E3
DISTI # SI2309DS-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI2309DS-T1-E3
    DISTI # SI2309DS-T1-E3CT-ND
    Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI2309DS-T1-E3
      DISTI # SI2309DS-T1-E3DKR-ND
      Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI2309DS-T1-E3
        DISTI # 70026067
        Vishay SiliconixMOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W
        RoHS: Compliant
        0
        • 1:$0.6200
        • 100:$0.5900
        • 250:$0.5600
        • 500:$0.5300
        • 1000:$0.5100
        SI2309DS-T1-E3
        DISTI # 781-SI2309DS-E3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
        RoHS: Compliant
        0
          SI2309DS-T1
          DISTI # 781-SI2309DS
          Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
          RoHS: Not compliant
          0
            영상 부분 # 설명
            SI2309DS

            Mfr.#: SI2309DS

            OMO.#: OMO-SI2309DS

            MOSFET Plastic-Encapsulated MOSFET P-CH-60V
            SI2309DS-T1-E3

            Mfr.#: SI2309DS-T1-E3

            OMO.#: OMO-SI2309DS-T1-E3

            MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
            SI2309DS

            Mfr.#: SI2309DS

            OMO.#: OMO-SI2309DS-1190

            MOSFET Plastic-Encapsulated MOSFET P-CH-60V
            SI2309DS , M1MA151KT2

            Mfr.#: SI2309DS , M1MA151KT2

            OMO.#: OMO-SI2309DS-M1MA151KT2-1190

            신규 및 오리지널
            SI2309DS-T1

            Mfr.#: SI2309DS-T1

            OMO.#: OMO-SI2309DS-T1-1190

            MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
            SI2309DS-T1-E3

            Mfr.#: SI2309DS-T1-E3

            OMO.#: OMO-SI2309DS-T1-E3-VISHAY

            MOSFET P-CH 60V 1.25A SOT23-3
            SI2309DS-T1-GE3

            Mfr.#: SI2309DS-T1-GE3

            OMO.#: OMO-SI2309DS-T1-GE3-1190

            P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs
            SI2309DS-TI

            Mfr.#: SI2309DS-TI

            OMO.#: OMO-SI2309DS-TI-1190

            신규 및 오리지널
            SI2309DS-TI-E3

            Mfr.#: SI2309DS-TI-E3

            OMO.#: OMO-SI2309DS-TI-E3-1190

            신규 및 오리지널
            SI2309DST1

            Mfr.#: SI2309DST1

            OMO.#: OMO-SI2309DST1-1190

            Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
            유효성
            재고:
            Available
            주문 시:
            5500
            수량 입력:
            SI2309DS-T1-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
            시작
            최신 제품
            Top