IPB090N06N3 G

IPB090N06N3 G
Mfr. #:
IPB090N06N3 G
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB090N06N3 G 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPB090N06N3 G 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
60 V
Id - 연속 드레인 전류:
50 A
Rds On - 드레인 소스 저항:
9 mOhms
Vgs - 게이트 소스 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
71 W
구성:
하나의
채널 모드:
상승
상표명:
옵티모스
포장:
키:
4.4 mm
길이:
10 mm
시리즈:
OptiMOS 3
트랜지스터 유형:
1 N-Channel
너비:
9.25 mm
상표:
인피니언 테크놀로지스
가을 시간:
5 ns
상품 유형:
MOSFET
상승 시간:
40 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
20 ns
일반적인 켜기 지연 시간:
15 ns
부품 번호 별칭:
IPB090N06N3GATMA1 IPB9N6N3GXT SP000398042
단위 무게:
0.139332 oz
Tags
IPB090, IPB09, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
부분 # 제조 설명 재고 가격
IPB090N06N3GATMA1
DISTI # V72:2272_06384657
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
473
  • 250:$0.7398
  • 100:$0.7473
  • 25:$0.9646
  • 10:$1.0716
  • 1:$1.2131
IPB090N06N3GATMA1
DISTI # V36:1790_06384657
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.3640
  • 500000:$0.3644
  • 100000:$0.4040
  • 10000:$0.4793
  • 1000:$0.4922
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
860In Stock
  • 500:$0.6422
  • 100:$0.7773
  • 10:$0.9970
  • 1:$1.1200
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
860In Stock
  • 500:$0.6422
  • 100:$0.7773
  • 10:$0.9970
  • 1:$1.1200
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 10000:$0.4200
  • 5000:$0.4364
  • 2000:$0.4594
  • 1000:$0.4922
IPB090N06N3 G
DISTI # 30605633
Infineon Technologies AGIPB090N06N3 G
RoHS: Compliant
480
  • 49:$0.5112
IPB090N06N3GATMA1
DISTI # 27089772
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
473
  • 21:$1.2131
IPB090N06N3GATMA1
DISTI # SP000398042
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398042)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 22800
  • 10000:€0.3159
  • 6000:€0.3409
  • 4000:€0.3689
  • 2000:€0.4029
  • 1000:€0.4919
IPB090N06N3 G
DISTI # IPB090N06N3G
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB090N06N3G)
RoHS: Not Compliant
Min Qty: 807
Container: Bulk
Americas - 0
  • 8070:$0.3929
  • 4035:$0.4009
  • 2421:$0.4139
  • 1614:$0.4299
  • 807:$0.4459
IPB090N06N3GXT
DISTI # IPB090N06N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB090N06N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.3169
  • 6000:$0.3229
  • 4000:$0.3339
  • 2000:$0.3469
  • 1000:$0.3599
IPB090N06N3 G
DISTI # 726-IPB090N06N3G
Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
1019
  • 1:$1.0200
  • 10:$0.8750
  • 100:$0.6720
  • 500:$0.5940
  • 1000:$0.4690
  • 2000:$0.4160
  • 10000:$0.4010
IPB090N06N3GInfineon Technologies AGPower Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
450
  • 1000:$0.4100
  • 500:$0.4300
  • 100:$0.4500
  • 25:$0.4700
  • 1:$0.5000
IPB090N06N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
2000
  • 1000:$0.3200
  • 500:$0.3300
  • 100:$0.3500
  • 25:$0.3600
  • 1:$0.3900
IPB090N06N3GATMA1
DISTI # 8269529P
Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TO263, RL775
  • 1000:£0.3370
  • 500:£0.4250
  • 250:£0.4810
  • 50:£0.5540
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,50A,71W,PG-TO263-341
  • 1000:$0.4257
  • 100:$0.4572
  • 10:$0.5270
  • 3:$0.6553
  • 1:$0.7615
IPB090N06N3GATMA1
DISTI # 1775550
Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-31790
  • 500:£0.4680
  • 250:£0.5360
  • 100:£0.6030
  • 25:£0.7630
  • 5:£0.9400
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Mfr.#: STM8L001J3M3

OMO.#: OMO-STM8L001J3M3-STMICROELECTRONICS

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신규 및 오리지널
유효성
재고:
913
주문 시:
2896
수량 입력:
IPB090N06N3 G의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.02
US$1.02
10
US$0.88
US$8.75
100
US$0.67
US$67.20
500
US$0.59
US$297.00
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