 | |  | |
| PartNumber | IPB090N06N3 G | IPB090N06N3GATMA1 | IPB090N06N3G |
| Description | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | MOSFET MV POWER MOS | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 9 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 71 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 40 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | IPB090N06N3GATMA1 IPB9N6N3GXT SP000398042 | G IPB090N06N3 IPB9N6N3GXT SP000398042 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB090N06N3 G | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | |
| IPB090N06N3GATMA1 | MOSFET N-CH 60V 50A TO263-3 | ||
Infineon Technologies |
IPB090N06N3GATMA1 | MOSFET MV POWER MOS | |
| IPB090N06N3 G | IPB090N06N3 G | ||
| IPB090N06N3G | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB090N06N3GATMA1 , 2SD1 | 신규 및 오리지널 | ||
| IPB090N06N3GS | 신규 및 오리지널 |