RN1907FE,LF(CB

Mfr. #:: RN1907FE,LF(CB
제조사:: Toshiba Semiconductor and Storage
설명:
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: RN1907FE,LF(CB 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 도시바 반도체 및 스토리지

제품 카테고리: 트랜지스터(BJT) - 어레이, 사전 바이어스

시리즈: -

포장: Digi-ReelR 대체 패키징

패키지 케이스: SOT-563, SOT-666

장착형: 표면 실장

공급자-장치-패키지: ES6

파워맥스: 100mW

트랜지스터형: 2 NPN - Pre-Biased (Dual)

전류 수집기 Ic-Max: 100mA

Voltage-Collector-Emitter-Breakdown-Max: 50V

저항기 베이스-R1-옴: 10k

저항-이미터-베이스-R2-옴: 47k

DC-전류-이득-hFE-Min-Ic-Vce: 80 @ 10mA, 5V

Vce-Saturation-Max-Ib-Ic: 300mV @ 250μA, 5mA

전류 수집기 컷오프 최대: 100nA (ICBO)

주파수 전환: 250MHz

Tags: RN1907F, RN1907, RN190, RN19, RN1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RN1907FE,LF(CB 설명

***i-Key: TRANS 2NPN PREBIAS 0.1W ES6

***ure Electronics: 2SAR523UB Series 50 V 100 mA PNP General Purpose Transistor - UMT3F

***ical: Trans GP BJT PNP 50V 0.1A 3-Pin UMTF T/R

***nell: TRANS, PNP, -50V, -0.1A, 150DEG C, 0.2W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***et Europe: Trans GP BJT PNP 50V 0.1A 3-Pin SOT-416FL T/R

***ment14 APAC: Transistor, PNP, -50V, -0.1A, 150DEG C, 0.15W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:-; Power

***nell: TRANS, PNP, -50V, -0.1A, 150DEG C, 0.15W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: -; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

*** Stop Electro: Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

***et: Trans GP BJT PNP 50V 0.1A 3-Pin SOT-723 T/R

***nell: TRANS, PNP, -50V, -0.1A, 150DEG C, 0.15W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 150mW; DC Collector Current: -100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: DDTC114CA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3

***p One Stop Global: Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R

***S.I.T. Europe - USA - Asia: Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***p One Stop Global: Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R

***ure Electronics: DDTC Series 50 V 100 mA NPN Pre-Biased Small Signal Transistor - SOT-23-3

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:4.7Kohm; Resistor Ratio, R1 / R2:1(Ratio); Msl:- Rohs Compliant: Yes

***ow.cn: Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-323 T/R

***ure Electronics: DDTC114 Series 50 V 100 mA Surface Mount Pre-Biased Transistor - SOT-323

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:0.21(Ratio); Msl:- Rohs Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
RN1907FE,LF(CT DISTI # V36:1790_13897297	Toshiba America Electronic Components	X34 PB-F ES6 PLN (LF) TRANSIST	0	4000000:$0.0242 2000000:$0.0243 400000:$0.0313 40000:$0.0458 4000:$0.0483
RN1907FE,LF(CT DISTI # RN1907FELF(CTCT-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.1W ES6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3338In Stock	1000:$0.0552 500:$0.0811 250:$0.0952 100:$0.1514 25:$0.1948 10:$0.2700 1:$0.3000
RN1907FE,LF(CT DISTI # RN1907FELF(CTDKR-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.1W ES6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3338In Stock	1000:$0.0552 500:$0.0811 250:$0.0952 100:$0.1514 25:$0.1948 10:$0.2700 1:$0.3000
RN1907FE,LF(CT DISTI # RN1907FELF(CTTR-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.1W ES6 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	100000:$0.0280 28000:$0.0336 12000:$0.0357 8000:$0.0420 4000:$0.0483
RN1907FELF(CT DISTI # RN1907FE,LF(CT	Toshiba America Electronic Components	Trans Digital BJT NPN 50V 100mA 6-Pin SC-107C T/R - Tape and Reel (Alt: RN1907FE,LF(CT) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	40000:$0.0256 24000:$0.0263 16000:$0.0278 8000:$0.0295 4000:$0.0314
RN1907FE,LF(CT DISTI # 757-RN1907FELF(CT	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor RoHS: Compliant	7240	1:$0.2900 10:$0.1860 100:$0.0780 1000:$0.0530 4000:$0.0400 8000:$0.0350 24000:$0.0320 48000:$0.0300 100000:$0.0270
RN1907FE,LF(CT	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor RoHS: Compliant	Americas -
RN1907FELF(CT	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW /250M RoHS: Compliant	Americas -

영상	부분 #	설명
	Mfr.#: RN1907FE,LF(CT OMO.#: OMO-RN1907FE-LF-CT	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
	Mfr.#: RN1907FE,LF(CT OMO.#: OMO-RN1907FE-LF-CT-TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
	Mfr.#: RN1907FELF(CTCT-ND OMO.#: OMO-RN1907FELF-CTCT-ND-1190	신규 및 오리지널
	Mfr.#: RN1907FELF(CTDKR-ND OMO.#: OMO-RN1907FELF-CTDKR-ND-1190	신규 및 오리지널
	Mfr.#: RN1907FELF(CTTR-ND OMO.#: OMO-RN1907FELF-CTTR-ND-1190	신규 및 오리지널
	Mfr.#: RN1907FELF(CT OMO.#: OMO-RN1907FELF-CT-1190	Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW /250M
	Mfr.#: RN1907FE OMO.#: OMO-RN1907FE-1190	신규 및 오리지널
	Mfr.#: RN1907FE,LF(CB OMO.#: OMO-RN1907FE-LF-CB-1190	신규 및 오리지널
	Mfr.#: RN1907FETE85L OMO.#: OMO-RN1907FETE85L-1190	신규 및 오리지널

RN1907FE,LF(CB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes