RN1907F

RN1907FE,LF(CT vs RN1907FE vs RN1907FE,LF(CB

 
PartNumberRN1907FE,LF(CTRN1907FERN1907FE,LF(CB
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
ManufacturerToshibaTOSHIBAToshiba Semiconductor and Storage
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased
RoHSY--
Transistor PolarityNPN--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio0.213--
Mounting StyleSMD/SMT--
Package / CaseSOT-563--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Pd Power Dissipation100 mW--
SeriesRN1907--
PackagingReel-Digi-ReelR Alternate Packaging
Emitter Base Voltage VEBO6 V--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.000106 oz--
Package Case--SOT-563, SOT-666
Mounting Type--Surface Mount
Supplier Device Package--ES6
Power Max--100mW
Transistor Type--2 NPN - Pre-Biased (Dual)
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--50V
Resistor Base R1 Ohms--10k
Resistor Emitter Base R2 Ohms--47k
DC Current Gain hFE Min Ic Vce--80 @ 10mA, 5V
Vce Saturation Max Ib Ic--300mV @ 250μA, 5mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--250MHz
제조사 부분 # 설명 RFQ
Toshiba
Toshiba
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