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MRFE6VP8600HR5

MRFE6VP8600HR5
Mfr. #:
MRFE6VP8600HR5
제조사:
NXP / Freescale
설명:
RF MOSFET Transistors VHV6 600W NI1230H 50V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
MRFE6VP8600HR5 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
MRFE6VP8600HR5 추가 정보
제품 속성
속성 값
제조사:
NXP
제품 카테고리:
RF MOSFET 트랜지스터
RoHS:
Y
트랜지스터 극성:
N-채널
기술:
시
Vds - 드레인 소스 항복 전압:
140 V
얻다:
18.8 dB
출력 파워:
600 W
최대 작동 온도:
+ 150 C
장착 스타일:
SMD/SMT
패키지/케이스:
NI-1230
포장:
릴
구성:
듀얼
동작 주파수:
470 MHz to 860 MHz
시리즈:
MRFE6VP8600H
유형:
RF 전력 MOSFET
상표:
NXP / 프리스케일
순방향 트랜스컨덕턴스 - 최소:
15.6 S
Pd - 전력 손실:
1.52 kW
상품 유형:
RF MOSFET 트랜지스터
공장 팩 수량:
50
하위 카테고리:
MOSFET
Vgs - 게이트 소스 전압:
10 V
Vgs th - 게이트 소스 임계 전압:
2.07 V
부품 번호 별칭:
935321656178
단위 무게:
0.464343 oz
Tags
MRFE6VP8, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,470 to 860 MHz, 600 W, Typ Gain in dB is 19.3 @ 860 MHz, 50 V, LDMOS, SOT1787
***et Europe
Transistor RF FET N-CH 130V 470MHz to 860MHz 4-Pin NI-1230 T/R
***ical
Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
***el Electronic
RF MOSFET Transistors VHV6 600W NI1230H 50V
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ment14 APAC
RF FET, 130V, 860MHZ-470MHZ, CASE 375D
***i-Key Marketplace
LDMOS BROADBAND RF POWER TRANSIS
***nell
RF FET, 130V, 860MHZ-470MHZ, CASE 375D; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.052kW; Operating Frequency Min: 860MHz; Operating Frequency Max: 470MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRFE6VP8600H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
MRFE6VP8600H LDMOS Broadband RF Power MOSFET
NXP's MRFE6VP8600H LDMOS N-Channel Broadband RF Power MOSFET is designed for broadband operation from 470 to 860 MHz. This device has an integrated input matching network for better power distribution. The NXP MRF6VP8600H is capable of handling 65:1 VSWR through all phase angles at 50 VDC, 860 MHz, has an exception efficiency for Class AB analog or digital television operation, has an integrated input matching, enables fast, easy and complete shutdown of the amplifier, and has an extended negative gate-source voltage range of -6.0 V to +10 V. These devices are ideally suited for use in analog or digital television transmitters.Learn More
부분 # 제조 설명 재고 가격
MRFE6VP8600HR5
DISTI # 21099683		NXP SemiconductorsTrans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
RoHS: Compliant		21
  • 1:$318.1500
MRFE6VP8600HR5
DISTI # MRFE6VP8600HR5CT-ND		NXP SemiconductorsFET RF 2CH 130V 860MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		47In Stock
  • 10:$267.3990
  • 1:$279.2000
MRFE6VP8600HR5
DISTI # MRFE6VP8600HR5DKR-ND		NXP SemiconductorsFET RF 2CH 130V 860MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		47In Stock
  • 10:$267.3990
  • 1:$279.2000
MRFE6VP8600HR5
DISTI # MRFE6VP8600HR5TR-ND		NXP SemiconductorsFET RF 2CH 130V 860MHZ NI-1230
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$253.8838
MRFE6VP8600HR5
DISTI # MRFE6VP8600HR5		Avnet, Inc.Trans MOSFET N-CH 130V 4-Pin NI-1230 T/R - Tape and Reel (Alt: MRFE6VP8600HR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$278.1900
  • 100:$267.2900
  • 200:$256.8900
  • 300:$247.4900
  • 500:$242.7900
MRFE6VP8600HR5
DISTI # 61AC0762		NXP SemiconductorsRF FET, 130V, 860MHZ-470MHZ, CASE 375D,Drain Source Voltage Vds:130V,Continuous Drain Current Id:-,Power Dissipation Pd:1.052kW,Operating Frequency Min:860MHz,Operating Frequency Max:470MHz,RF Transistor Case:NI-1230,No. of RoHS Compliant: Yes50
  • 1:$279.2100
  • 10:$267.3900
  • 25:$263.4500
MRFE6VP8600HR5
DISTI # 841-MRFE6VP8600HR5		NXP SemiconductorsRF MOSFET Transistors VHV6 600W NI1230H 50V
RoHS: Compliant		155
  • 1:$279.2100
  • 5:$272.9800
  • 10:$267.3900
  • 25:$263.4500
  • 50:$253.8800
MRFE6VP8600HR5
DISTI # MRFE6VP8600HR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		48
  • 1:$263.1200
  • 10:$256.1900
  • 25:$252.8700
MRFE6VP8600HR5
DISTI # 2890609		NXP SemiconductorsRF FET, 130V, 860MHZ-470MHZ, CASE 375D
RoHS: Compliant		50
  • 1:£218.0000
  • 5:£199.0000
MRFE6VP8600HR5
DISTI # 2890609		NXP SemiconductorsRF FET, 130V, 860MHZ-470MHZ, CASE 375D
RoHS: Compliant		50
  • 1:$445.0300
  • 10:$426.2100
영상 부분 # 설명
MRFE6VP61K25HR6

Mfr.#: MRFE6VP61K25HR6

OMO.#: OMO-MRFE6VP61K25HR6

 RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
MRFE6VP5150NR1

Mfr.#: MRFE6VP5150NR1

OMO.#: OMO-MRFE6VP5150NR1

 RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
MRFE6VP61K25NR6

Mfr.#: MRFE6VP61K25NR6

OMO.#: OMO-MRFE6VP61K25NR6

 RF MOSFET Transistors 1.8-600 MHz 1250 W CW 50 V
MRFE6VP100HR5

Mfr.#: MRFE6VP100HR5

OMO.#: OMO-MRFE6VP100HR5

 RF MOSFET Transistors VHV6 100W 50V ISM
MRFE6VP5600HR5

Mfr.#: MRFE6VP5600HR5

OMO.#: OMO-MRFE6VP5600HR5

 RF MOSFET Transistors VHV6 600W 50V NI1230H
MRFE6VP6300-88

Mfr.#: MRFE6VP6300-88

OMO.#: OMO-MRFE6VP6300-88

 RF MOSFET Transistors MRFE6VP6300-88
MRFE6VP6300HSR5

Mfr.#: MRFE6VP6300HSR5

OMO.#: OMO-MRFE6VP6300HSR5

 RF MOSFET Transistors VHV6 300W50VISM NI780S-4
MRFE6VP100H

Mfr.#: MRFE6VP100H

OMO.#: OMO-MRFE6VP100H-1190

 신규 및 오리지널
MRFE6VP61K25GNR6

Mfr.#: MRFE6VP61K25GNR6

OMO.#: OMO-MRFE6VP61K25GNR6-NXP-SEMICONDUCTORS

 TRANS RF LDMOS 1250W 50V
MRFE6VP6300HR5

Mfr.#: MRFE6VP6300HR5

OMO.#: OMO-MRFE6VP6300HR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 300W50VISM NI780H-4
유효성
재고:
156
주문 시:
2139
수량 입력:
MRFE6VP8600HR5의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$279.21
US$279.21
5
US$272.98
US$1 364.90
10
US$267.39
US$2 673.90
25
US$263.45
US$6 586.25
시작
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