SI7102DN-T1-GE3

Mfr. #:: SI7102DN-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 12V 35A 1212-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI7102DN-T1-GE3 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI7102DN-GE3

장착 스타일: SMD/SMT

패키지 케이스: PowerPAKR 1212-8

기술: 시

작동 온도: -50°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: PowerPAKR 1212-8

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 52W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 12V

입력-커패시턴스-Ciss-Vds: 3720pF @ 6V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 35A (Tc)

Rds-On-Max-Id-Vgs: 3.8 mOhm @ 15A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Charge-Qg-Vgs: 110nC @ 8V

Pd 전력 손실: 3.8 W

최대 작동 온도: + 150 C

최소 작동 온도: - 50 C

가을철: 12 ns

상승 시간: 125 ns

Vgs 게이트 소스 전압: 8 V

Id-연속-드레인-전류: 25 A

Vds-드레인-소스-고장-전압: 12 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V

Rds-On-Drain-Source-Resistance: 3.8 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 53 ns

일반 켜기 지연 시간: 27 ns

Qg-Gate-Charge: 73 nC

채널 모드: 상승

Tags: SI7102, SI710, SI71, SI7

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7102DN-T1-GE3 설명

***ure Electronics: Single N-Channel 12 V 0.0038 O 110 nC SMT Power Mosfet - PowerPAK-1206-8

***ark: Mosfet, N Channel, 12V, 35A, Powerpak 1212-8, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0031Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes

***nell: MOSFET, N CH, 12V, 35A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:52W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-

Market price

부분 #	제조	설명	재고	가격
SI7102DN-T1-GE3 DISTI # V72:2272_09215602	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	142	100:$1.0144 25:$1.2147 10:$1.2196 1:$1.3855
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.9059
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2879In Stock	1000:$1.0021 500:$1.2095 100:$1.5550 10:$1.9350 1:$2.1400
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI7102DN-T1-GE3 DISTI # 29754142	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.9546
SI7102DN-T1-GE3 DISTI # 25789860	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	142	100:$1.0144 25:$1.2147 12:$1.2196
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R (Alt: SI7102DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R (Alt: SI7102DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.5179 6000:€1.0639 12000:€0.8769 18000:€0.7789 30000:€0.7369
SI7102DN-T1-GE3 DISTI # 05W6953	Vishay Intertechnologies	MOSFET, N CHANNEL, 12V, 35A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:12V,On Resistance Rds(on):3.1mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes	0	1:$1.9000 25:$1.5800 50:$1.4000 100:$1.2200 250:$1.1500 500:$1.0700 1000:$1.0200
SI7102DN-T1-GE3. DISTI # 28AC2159	Vishay Intertechnologies	N-CHANNEL 12-V (D-S) MOSFET , ROHS COMPLIANT: YES	0
SI7102DN-T1-GE3 DISTI # 781-SI7102DN-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK 1212-8 RoHS: Compliant	2110	1:$1.9000 10:$1.5800 100:$1.2200 500:$1.0700 1000:$1.0200
SI7102DN-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas - 18000
SI7102DN-T1-GE3 DISTI # 2335346	Vishay Intertechnologies	MOSFET, N CH, 12V, 35A, POWERPAK 1212 RoHS: Compliant	287	1:$3.0100 10:$2.5000 100:$1.9400 500:$1.7000 1000:$1.6200 3000:$1.6200
SI7102DN-T1-GE3 DISTI # 2335346	Vishay Intertechnologies	MOSFET, N CH, 12V, 35A, POWERPAK 1212 RoHS: Compliant	297	5:£1.2900 25:£1.1800 100:£0.9090 250:£0.8530 500:£0.7970
SI7102DN-T1-GE3 DISTI # C1S803601025928	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	142	100:$1.0144 25:$1.2147 10:$1.2196

영상	부분 #	설명
	Mfr.#: SI7102DN-T1-E3 OMO.#: OMO-SI7102DN-T1-E3	MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3
	Mfr.#: SI7102DN-T1-GE3 OMO.#: OMO-SI7102DN-T1-GE3	MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3
	Mfr.#: SI7102DN OMO.#: OMO-SI7102DN-1190	신규 및 오리지널
	Mfr.#: SI7102DN-T1-E3 OMO.#: OMO-SI7102DN-T1-E3-VISHAY	MOSFET N-CH 12V 35A PPAK 1212-8
	Mfr.#: SI7102DN-T1-GE3 OMO.#: OMO-SI7102DN-T1-GE3-VISHAY	MOSFET N-CH 12V 35A 1212-8
	Mfr.#: SI7102DNTE1GE3 OMO.#: OMO-SI7102DNTE1GE3-1190	신규 및 오리지널

SI7102DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes