FGL60N100BNTD

Mfr. #:: FGL60N100BNTD
제조사:: ON Semiconductor / Fairchild
설명:: IGBT Transistors HIGH POWER
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FGL60N100BNTD 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-264-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 1000 V

수집기-이미터 포화 전압:: 1.5 V

최대 게이트 이미터 전압:: 25 V

25C에서 연속 수집기 전류:: 60 A

Pd - 전력 손실:: 180 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: FGL60N100BNTD

포장:: 튜브

연속 수집가 현재 IC 최대:: 60 A

키:: 26 mm

길이:: 20 mm

너비:: 5 mm

상표:: 온세미컨덕터 / 페어차일드

지속적인 수집가 전류:: 60 A

게이트-이미터 누설 전류:: +/- 500 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 375

하위 카테고리:: IGBT

부품 번호 별칭:: FGL60N100BNTD_NL

단위 무게:: 0.238311 oz

Tags: FGL60N100BNT, FGL60N100B, FGL60N10, FGL60N1, FGL60N, FGL60, FGL6, FGL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGL60N100BNTD 설명

*** Source Electronics: IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube

***ure Electronics: FGL60N100 Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264-3L

***ark: TRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,60A I(C),TO-264

***rchild Semiconductor: Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

***nell: IGBT, NPT, TO-264; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1000V; Current Ic Continuous a Max:60A; Voltage, Vce Sat Max:2.9V; Power Dissipation:180W; Case Style:TO-264; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1000V; Current Ic @ Vce Sat:60A; Current, Icm Pulsed:120A; Power, Pd:180W; Time, Rise:320ns

***th Star Micro: Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications Product Highlights: High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode

***ical: Trans IGBT Chip N=-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Rail

***ource: Discrete, Short Circuit Rated IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail

***ure Electronics: SGL50N60RUFD Series 600 V 80 A Flange Mount Short Circuit Rated IGBT -TO-264

***ment14 APAC: SINGLE IGBT, 600V, 80A; Transistor Type:; SINGLE IGBT, 600V, 80A; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

***ark: Igbt Single Transistor, 160 A, 2.6 V, 250 W, 600 V, To-264, 3 Rohs Compliant: Yes

***ource: Discrete, High Performance IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail

***ical: Trans IGBT Chip N=-CH 600V 160A 250000mW 3-Pin(3+Tab) TO-264 Rail

***ure Electronics: SGL160N60UFD Series 600 V 160 A Flange Mount Ultra-Fast IGBT -TO-264

***nell: IGBT, ULTRAFAST, 600V, 160A, TO-264; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***rchild Semiconductor: Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.

***ical: Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail

***ure Electronics: FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264

***nell: IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br)ceo: 1.2kV; Operating Temperature Range

***rchild Semiconductor: Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

***ical: Trans IGBT Chip N=-CH 1200V 70A 368000mW 3-Pin(3+Tab) TO-264 Rail

***ure Electronics: FGL35N120FTD Series 1200 V 35 A Field Stop Trench IGBT - TO-264 3L

***rchild Semiconductor: Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.

Market price

부분 #	제조	설명	재고	가격
FGL60N100BNTD DISTI # V99:2348_06359681	ON Semiconductor	Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube	145	750:$3.4731 1125:$3.4731 375:$3.5440 10:$4.1060 1:$4.5110
FGL60N100BNTD DISTI # FGL60N100BNTDFS-ND	ON Semiconductor	IGBT 1000V 60A 180W TO264 RoHS: Compliant Min Qty: 1 Container: Tube	72In Stock	1125:$3.6719 750:$4.3187 375:$4.7913 10:$6.1100 1:$6.7800
FGL60N100BNTDTU DISTI # FGL60N100BNTDTU-ND	ON Semiconductor	IGBT 1000V 60A 180W TO264 RoHS: Compliant Min Qty: 375 Container: Tube	Limited Supply - Call	375:$3.5235
FGL60N100BNTD DISTI # 31599406	ON Semiconductor	Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube	155	5:$4.6368
FGL60N100BNTD DISTI # 31035706	ON Semiconductor	Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube	145	10:$4.9910 3:$5.4740
FGL60N100BNTD DISTI # FGL60N100BNTD	ON Semiconductor	Trans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL60N100BNTD) RoHS: Compliant Min Qty: 1	Europe - 0	1:€3.1900 10:€2.8900 25:€2.7900 50:€2.6900 100:€2.5900 500:€2.4900 1000:€2.2900
FGL60N100BNTD DISTI # FGL60N100BNTD	ON Semiconductor	Trans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL60N100BNTD) RoHS: Compliant Min Qty: 375 Container: Tube	Americas - 0	375:$4.2900 750:$4.2900 1500:$4.2900 2250:$4.2900 3750:$4.2900
FGL60N100BNTD DISTI # 09J6255	ON Semiconductor	Trans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Bulk (Alt: 09J6255) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$4.8300
FGL60N100BNTDTU DISTI # FGL60N100BNTDTU	ON Semiconductor	Trans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL60N100BNTDTU) RoHS: Compliant Min Qty: 1	Europe - 0	1:€2.2900 10:€2.1900 25:€2.0900 50:€1.9900 100:€1.9900 500:€1.8900 1000:€1.8900
FGL60N100BNTDTU DISTI # FGL60N100BNTDTU	ON Semiconductor	Trans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL60N100BNTDTU) RoHS: Compliant Min Qty: 375 Container: Tube	Americas - 0	375:$4.4900 750:$4.4900 1500:$4.3900 2250:$4.3900 3750:$4.2900
FGL60N100BNTD DISTI # 09J6255	ON Semiconductor	IGBT, SINGLE, N-CH, 1KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:180W,Collector Emitter Voltage V(br)ceo:1kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	212	1:$5.0300
FGL60N100BNTDTU DISTI # 60J0636	ON Semiconductor	TRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,42A I(C),TO-264 RoHS Compliant: Yes	0	500:$2.3600 250:$2.4300 100:$2.9100 50:$3.3600 25:$3.5800 10:$4.0900 1:$4.7200
FGL60N100BNTDTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-264AA RoHS: Compliant	25	1000:$2.5100 500:$2.6500 100:$2.7500 25:$2.8700 1:$3.0900
FGL60N100BNTD DISTI # 512-FGL60N100BNTD	ON Semiconductor	IGBT Transistors HIGH POWER RoHS: Compliant	0
FGL60N100BNTDTU DISTI # 512-FGL60N100BNTDTU	ON Semiconductor	IGBT Transistors HIGH POWER RoHS: Compliant	0
FGL60N100BNTD DISTI # FGL60N100BNTD	ON Semiconductor	Transistor: IGBT,1kV,42A,72W,TO264	121	1:$5.6500 3:$4.8600 10:$3.9000 25:$3.3900
FGL60N100BNTD DISTI # 1095037	ON Semiconductor	IGBT, NPT, TO-264 RoHS: Compliant	0	500:£2.5300 250:£2.6100 100:£3.6700 10:£4.7200 1:£5.7700
FGL60N100BNTD DISTI # XSFP00000156156	Fairchild Semiconductor Corporation	RoHS: Compliant	1125	1125:$6.2400 375:$6.8600
FGL60N100BNTDTU DISTI # XSFP00000166970	Fairchild Semiconductor Corporation	RoHS: Compliant	9750	9750:$4.8400 375:$5.3200
FGL60N100BNTD DISTI # 1095037	ON Semiconductor	IGBT, NPT, TO-264 RoHS: Compliant	0	1125:$5.5600 750:$6.5900 375:$7.3400 10:$9.4400 1:$10.5000

FGL60N100BNTD

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes