FGL60N100BNT stock, FGL60N100BNT, FGL60N100BNTD


PartNumber	FGL60N100BNTD	FGL60N100BNTDTU
Description	IGBT Transistors HIGH POWER	IGBT Transistors HIGH POWER
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	IGBT Transistors	IGBT Transistors
RoHS	Y	Y
Technology	Si	Si
Package / Case	TO-264-3	TO-264-3
Mounting Style	Through Hole	Through Hole
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	1000 V	1000 V
Collector Emitter Saturation Voltage	1.5 V	1.5 V
Maximum Gate Emitter Voltage	25 V	25 V
Continuous Collector Current at 25 C	60 A	60 A
Pd Power Dissipation	180 W	180 W
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	FGL60N100BNTD	FGL60N100BNTD
Packaging	Tube	Tube
Continuous Collector Current Ic Max	60 A	60 A
Height	26 mm	26 mm
Length	20 mm	20 mm
Width	5 mm	5 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Continuous Collector Current	60 A	60 A
Gate Emitter Leakage Current	+/- 500 nA	+/- 500 nA
Product Type	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	375	375
Subcategory	IGBTs	IGBTs
Part # Aliases	FGL60N100BNTD_NL	FGL60N100BNTDTU_NL
Unit Weight	0.238311 oz	0.238311 oz

Search Part Number : "FGL60N100BNT", Match & Start with "FGL60N100BNT" - Total : 11

FGL60N100BNT