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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC016N03MSGATMA1 DISTI # BSC016N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC016N03MSGATMA1 DISTI # BSC016N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC016N03MSGATMA1 DISTI # BSC016N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC016N03MS G DISTI # BSC016N03MS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: BSC016N03MS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC016N03MSGATMA1 DISTI # BSC016N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC016N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC016N03MSGATMA1 DISTI # SP000311502 | Infineon Technologies AG | Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: SP000311502) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSC016N03MSGATMA1 DISTI # 60R2473 | Infineon Technologies AG | MOSFET, N CH, 100A, 30V, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.3mohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:125W,Operating , RoHS Compliant: Yes | 1844 |
|
| BSC016N03MSG | Infineon Technologies AG | Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 44188 |
|
| BSC016N03MS G DISTI # 726-BSC016N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M RoHS: Compliant | 6932 |
|
| BSC016N03MS G | Infineon Technologies AG | 30 | ||
| BSC016N03MSGATMA1 DISTI # BSC016N03MSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,100A,125W,PG-TDSON-8 | 4821 |
|
| BSC016N03MSGATMA1 DISTI # 1775423 | Infineon Technologies AG | MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant | 1844 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSC016N06NS OMO.#: OMO-BSC016N06NS |
MOSFET N-Ch 60V 100A DSON-8 OptiMOS |
|
|
Mfr.#: BSC016N06NSATMA1 OMO.#: OMO-BSC016N06NSATMA1 |
MOSFET N-Ch 60V 100A DSON-8 OptiMOS |
|
|
Mfr.#: BSC016N03MS G OMO.#: OMO-BSC016N03MS-G |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M |
|
|
Mfr.#: BSC016N03MSGATMA1 OMO.#: OMO-BSC016N03MSGATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC016N03LS OMO.#: OMO-BSC016N03LS-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSC016N03LSGXT OMO.#: OMO-BSC016N03LSGXT-1190 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC016N04LS OMO.#: OMO-BSC016N04LS-1190 |
100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET |
|
|
Mfr.#: BSC016N04LSG OMO.#: OMO-BSC016N04LSG-1190 |
100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET |
|
|
Mfr.#: BSC016N06NS , TDA3629T , |
신규 및 오리지널 |
|
Mfr.#: BSC016N06NSATMA1 |
MOSFET N-CH 60V 30A TDSON-8 |
