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BSC016N06NSATMA1

BSC016N06NSATMA1
Mfr. #:
BSC016N06NSATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH 60V 30A TDSON-8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSC016N06NSATMA1 데이터 시트
배달:
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ECAD Model:
추가 정보:
BSC016N06NSATMA1 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
옵티모스
포장
릴
부분 별칭
BSC016N06NS BSC016N06NSXT SP000924882
장착 스타일
SMD/SMT
상표명
옵티모스
패키지 케이스
TDSON-8
기술
시
채널 수
1 Channel
구성
싱글 쿼드 드레인 트리플 소스
트랜지스터형
1 N-Channel
Pd 전력 손실
139 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
9 ns
상승 시간
9 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
100 A
Vds-드레인-소스-고장-전압
60 V
Vgs-th-Gate-Source-Threshold-Voltage
2.8 V
Rds-On-Drain-Source-Resistance
1.6 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
35 ns
일반 켜기 지연 시간
19 ns
Qg-Gate-Charge
71 nC
순방향 트랜스컨덕턴스-최소
140 S / 70 S
Tags
BSC016N06, BSC016, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
부분 # 제조 설명 재고 가격
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 5000:$1.0010
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC016N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.8059
  • 10000:$0.7769
  • 20000:$0.7489
  • 30000:$0.7239
  • 50000:$0.7109
BSC016N06NSATMA1
DISTI # BSC016N06NS		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R (Alt: BSC016N06NS)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC016N06NSATMA1
    DISTI # 79X1327    		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 1:$2.0600
    • 10:$1.7700
    • 25:$1.6700
    • 50:$1.5600
    • 100:$1.4600
    • 250:$1.3500
    • 500:$1.3000
    • 1000:$1.2600
    BSC016N06NSATMA1.
    DISTI # 27AC1071    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:139W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.8060
    • 10000:$0.7770
    • 20000:$0.7490
    • 30000:$0.7240
    • 50000:$0.7110
    BSC016N06NS
    DISTI # 726-BSC016N06NS    		Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant    		143
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 726-BSC016N06NSATMA1    		Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant    		0
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 2432702    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:£1.8900
    • 10:£1.4900
    • 100:£1.2000
    • 250:£1.1200
    • 500:£1.1000
    BSC016N06NSATMA1
    DISTI # 2432702    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
    BSC016N06NSATMA1
    DISTI # 2432702RL    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
    영상 부분 # 설명
    BSC016N06NSATMA1

    Mfr.#: BSC016N06NSATMA1

    OMO.#: OMO-BSC016N06NSATMA1

    		 MOSFET N-Ch 60V 100A DSON-8 OptiMOS
    BSC016N04LS G

    Mfr.#: BSC016N04LS G

    OMO.#: OMO-BSC016N04LS-G

    		 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    BSC016N04LSGATMA1

    Mfr.#: BSC016N04LSGATMA1

    OMO.#: OMO-BSC016N04LSGATMA1

    		 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    BSC016N03LSGXT/BKN

    Mfr.#: BSC016N03LSGXT/BKN

    OMO.#: OMO-BSC016N03LSGXT-BKN-1190

    		 INSTOCK
    BSC016N03LSGXT

    Mfr.#: BSC016N03LSGXT

    OMO.#: OMO-BSC016N03LSGXT-1190

    		 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
    BSC016N03MS

    Mfr.#: BSC016N03MS

    OMO.#: OMO-BSC016N03MS-1190

    		 Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8
    BSC016N03MSG

    Mfr.#: BSC016N03MSG

    OMO.#: OMO-BSC016N03MSG-1190

    		 Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC016N03MSGXT

    Mfr.#: BSC016N03MSGXT

    OMO.#: OMO-BSC016N03MSGXT-1190

    		 신규 및 오리지널
    BSC016N06NSATMA1

    Mfr.#: BSC016N06NSATMA1

    OMO.#: OMO-BSC016N06NSATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 30A TDSON-8
    BSC016N06NSTATMA1

    Mfr.#: BSC016N06NSTATMA1

    OMO.#: OMO-BSC016N06NSTATMA1-INFINEON-TECHNOLOGIES

    		 DIFFERENTIATED MOSFETS
    유효성
    재고:
    Available
    주문 시:
    1500
    수량 입력:
    BSC016N06NSATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$1.07
    US$1.07
    10
    US$1.01
    US$10.13
    100
    US$0.96
    US$95.97
    500
    US$0.91
    US$453.20
    1000
    US$0.85
    US$853.10
    시작
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