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IXFK32N80Q3

IXFK32N80Q3
Mfr. #:
IXFK32N80Q3
제조사:
Littelfuse
설명:
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFK32N80Q3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK32N80Q3 DatasheetIXFK32N80Q3 Datasheet (P4-P5)
ECAD Model:
추가 정보:
IXFK32N80Q3 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-264-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
800 V
Id - 연속 드레인 전류:
32 A
Rds On - 드레인 소스 저항:
270 mOhms
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
140 nC
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
1 kW
구성:
하나의
상표명:
HiPerFET
포장:
튜브
시리즈:
IXFK32N80
트랜지스터 유형:
1 N-Channel
상표:
익시스
상품 유형:
MOSFET
상승 시간:
300 ns
공장 팩 수량:
25
하위 카테고리:
MOSFET
단위 무게:
0.264555 oz
Tags
IXFK32N, IXFK32, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
***i-Key
MOSFET N-CH 800V 32A TO264AA
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br); Available until stocks are exhausted
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***hard Electronics
STMICROELECTRONICS 2STA1943Bipolar (BJT) Single Transistor, PNP, 230 V, 30 MHz, 150 W, 8 A, 80
***ure Electronics
2STA1943 Series PNP 230 V 15 A Epitaxial Planar Bipolar Transistor - TO-264
***icroelectronics
High power PNP epitaxial planar bipolar transistor
***ical
Trans GP BJT PNP 230V 15A 3-Pin TO-264 Tube
*** Electronic Components
Bipolar Transistors - BJT High Pwr PNP BiPolar Trans
***r Electronics
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
***ment14 APAC
Transistor, PNP TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency ft:30MHz; Power Dissipation Pd:150W;
***nell
TRANSISTOR, PNP TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 230V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: 8A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 3V; Continuous Collector Current Ic Max: 15A; Current Ic Continuous a Max: 8A; Current Ic hFE: 1A; Device Marking: 2STA1943; Gain Bandwidth ft Typ: 30MHz; Hfe Min: 80; Power Dissipation Ptot Max: 150W; Termination Type: Through Hole; Voltage Vcbo: 230V
***icroelectronics
High power PNP epitaxial planar bipolar transistor
*** Electronics
STMICROELECTRONICS 2STA2121Bipolar (BJT) Single Transistor, PNP, -250 V, 25 MHz, 220 W, -17 A, 80
***ical
Trans GP BJT PNP 250V 17A 3-Pin TO-264 Tube
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT PNP Power Transisto
***nell
TRANS PNP 250V 17A BIT-LA TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -250V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 220W; DC Collector Current: -17A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): -3V; Current Ic Continuous a Max: -8A; Gain Bandwidth ft Typ: 25MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Through Hole; Transistor Type: Power Bipolar
***hard Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
부분 # 제조 설명 재고 가격
IXFK32N80Q3
DISTI # IXFK32N80Q3-ND		IXYS CorporationMOSFET N-CH 800V 32A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		50In Stock
  • 100:$16.3200
  • 25:$17.7600
  • 1:$21.1200
IXFK32N80Q3
DISTI # 747-IXFK32N80Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
RoHS: Compliant		0
  • 1:$24.2900
  • 10:$22.0800
  • 25:$20.4200
  • 50:$18.7900
  • 100:$18.3300
  • 250:$16.8000
  • 500:$15.2500
영상 부분 # 설명
IXFK32N100X

Mfr.#: IXFK32N100X

OMO.#: OMO-IXFK32N100X

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IXFK36N60P

Mfr.#: IXFK36N60P

OMO.#: OMO-IXFK36N60P

 MOSFET 600V 36A
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P

 MOSFET 32 Amps 1000V 0.32 Rds
IXFK32N60C

Mfr.#: IXFK32N60C

OMO.#: OMO-IXFK32N60C-1190

 신규 및 오리지널
IXFK38N80Q2TRL

Mfr.#: IXFK38N80Q2TRL

OMO.#: OMO-IXFK38N80Q2TRL-1190

 신규 및 오리지널
IXFK300N20X3

Mfr.#: IXFK300N20X3

OMO.#: OMO-IXFK300N20X3-IXYS-CORPORATION

 200V/300A ULTRA JUNCTION X3-CLAS
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P-IXYS-CORPORATION

 Darlington Transistors MOSFET 32 Amps 1000V 0.32 Rds
IXFK35N50

Mfr.#: IXFK35N50

OMO.#: OMO-IXFK35N50-IXYS-CORPORATION

 MOSFET 35 Amps 500V 0.15 Rds
IXFK38N80Q2

Mfr.#: IXFK38N80Q2

OMO.#: OMO-IXFK38N80Q2-IXYS-CORPORATION

 MOSFET 38 Amps 800V 0.22 Rds
IXFK360N10T

Mfr.#: IXFK360N10T

OMO.#: OMO-IXFK360N10T-IXYS-CORPORATION

 MOSFET N-CH 100V 360A TO-264
유효성
재고:
Available
주문 시:
3000
수량 입력:
IXFK32N80Q3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$24.29
US$24.29
10
US$22.08
US$220.80
25
US$20.42
US$510.50
50
US$18.79
US$939.50
100
US$18.33
US$1 833.00
250
US$16.80
US$4 200.00
500
US$15.25
US$7 625.00
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