We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSP603S2LHUMA1 DISTI # V36:1790_06390875 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant | 0 |
|
| BSP603S2LHUMA1 DISTI # BSP603S2LHUMA1-ND | Infineon Technologies AG | MOSFET N-CH 55V 5.2A SOT-223 Min Qty: 4000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP603S2LHUMA1 DISTI # 31229021 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant | 40 |
|
| BSP603S2LHUMA1 DISTI # BSP603S2LHUMA1 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP603S2LHUMA1) RoHS: Compliant Min Qty: 4000 Container: Reel | Americas - 0 | |
| BSP603S2LHUMA1 DISTI # SP000431792 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R (Alt: SP000431792) Min Qty: 4000 Container: Tape and Reel | Europe - 0 | |
| BSP603S2LNT | Infineon Technologies AG | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, N-Channel, MOSFET RoHS: Not Compliant | 83663 |
|
| BSP603S2LHUMA1 DISTI # 4622935 | Infineon Technologies AG | In a Pack of 10, BSP603S2LHUMA1 N-Channel MOSFET, 5.2 A, 55 V OptiMOS, 3 + Tab-Pin SOT-223 Infineon, PK Min Qty: 10 Container: Package | 440 |
|
| BSP603S2LHUMA1 DISTI # 9114820 | Infineon Technologies AG | On a Reel of 4000, BSP603S2LHUMA1 N-Channel MOSFET, 5.2 A, 55 V OptiMOS, 3 + Tab-Pin SOT-223 Infineon, RL Min Qty: 4000 Container: Reel | 0 |
|
| BSP603S2L DISTI # BSP603S2L | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,55V,5.2A,1.8W,SOT223 | 3716 |
|
| BSP603S2LHUMA1 DISTI # XSKDRABV0052505 | Infineon Technologies AG | RoHS: Compliant | 16000 in Stock0 on Order |
|
| BSP603S2L | Infineon Technologies AG | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 1395 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
|
Mfr.#: BSP603S2L OMO.#: OMO-BSP603S2L |
MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS |
|
|
Mfr.#: BSP603S2LHUMA1 OMO.#: OMO-BSP603S2LHUMA1 |
MOSFET N-CHANNEL_55/60V |
|
Mfr.#: BSP603S22 OMO.#: OMO-BSP603S22-1190 |
신규 및 오리지널 |
|
Mfr.#: BSP603S2L .. OMO.#: OMO-BSP603S2L--1190 |
신규 및 오리지널 |
|
Mfr.#: BSP603S2L H6327 OMO.#: OMO-BSP603S2L-H6327-1190 |
신규 및 오리지널 |
|
Mfr.#: BSP603S2LGRN OMO.#: OMO-BSP603S2LGRN-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSP603S2LHUMA1 |
MOSFET N-CH 55V 5.2A SOT-223 |
|
Mfr.#: BSP603S2LNT OMO.#: OMO-BSP603S2LNT-1190 |
Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSP603S2L OMO.#: OMO-BSP603S2L-128 |
MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS |