 |  | | |
| PartNumber | BSP60,115 | BSP603S2L | BSP603S2LHUMA1 |
| Description | Darlington Transistors TRANS DARLINGTON | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS | MOSFET N-CHANNEL_55/60V |
| Manufacturer | Nexperia | Infineon | Infineon |
| Product Category | Darlington Transistors | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Configuration | Single | Single | Single |
| Transistor Polarity | PNP | N-Channel | N-Channel |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Pd Power Dissipation | 1.25 W | 1.8 W | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-3 | SOT-223-4 | SOT-223-4 |
| Minimum Operating Temperature | - 65 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| DC Current Gain hFE Max | 1000 | - | - |
| Height | 1.7 mm | 1.6 mm | 1.6 mm |
| Length | 6.7 mm | 6.5 mm | 6.5 mm |
| Operating Temperature Range | - 65 C to + 150 C | - | - |
| Width | 3.7 mm | 3.5 mm | 3.5 mm |
| Brand | Nexperia | Infineon Technologies | Infineon Technologies |
| Continuous Collector Current | - 1 A | - | - |
| DC Collector/Base Gain hfe Min | 1000 | - | - |
| Product Type | Darlington Transistors | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 4000 | - |
| Subcategory | Transistors | MOSFETs | MOSFETs |
| Part # Aliases | BSP60 T/R | BSP603S2LHUMA1 BSP63S2LXT SP000431792 | BSP603S2L BSP63S2LXT SP000431792 |
| Unit Weight | 0.003951 oz | 0.003951 oz | 0.008826 oz |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Vds Drain Source Breakdown Voltage | - | 55 V | 55 V |
| Id Continuous Drain Current | - | 5.2 A | - |
| Rds On Drain Source Resistance | - | 33 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | OptiMOS | OptiMOS |
| Product | - | MOSFET Small Signal | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 16 ns | - |
| Moisture Sensitive | - | Yes | - |
| Rise Time | - | 16 ns | - |
| Typical Turn Off Delay Time | - | 28 ns | - |
| Typical Turn On Delay Time | - | 10.8 ns | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Nexperia |
BSP60,115 | Darlington Transistors TRANS DARLINGTON | |
| BSP60,115 | Darlington Transistors TRANS DARLINGTON | ||
Infineon Technologies |
BSP603S2L | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS | |
| BSP603S2LHUMA1 | MOSFET N-CH 55V 5.2A SOT-223 | ||
| BSP60E6327HTSA1 | TRANS PNP DARL 45V 1A SOT-223 | ||
| BSP60H6327XTSA1 | TRANS PNP DARL 45V 1A SOT223 | ||
Infineon Technologies |
BSP603S2LHUMA1 | MOSFET N-CHANNEL_55/60V | |
| BSP60H6327XTSA1 | Darlington Transistors AF TRANSISTORS | ||
| BSP60.115 | Transistor: PNP, bipolar, Darlington, 45V, 1A, 1.25W, SOT223 | ||
| BSP60 | TRANSISTOR, DARLINGTON, -45V, SOT223, Transistor Polarity:Dual PNP, Collector Emitter Voltage V(br)ceo:-45V, Transition Frequency ft:200MHz, Power Dissipation Pd:1.25W, DC Collector Current:-1A, | ||
| BSP60 E6433 | 신규 및 오리지널 | ||
| BSP60 E6327 | 신규 및 오리지널 | ||
| BSP60 E6327 SOT223 | 신규 및 오리지널 | ||
| BSP60 E6327 , TEM2027D , | 신규 및 오리지널 | ||
| BSP60 E6433 , TEM2300 , | 신규 및 오리지널 | ||
| BSP60 H6327 | 신규 및 오리지널 | ||
| BSP60115 | Now Nexperia BSP60 - Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SC-73 | ||
| BSP603 | 신규 및 오리지널 | ||
| BSP603S22 | 신규 및 오리지널 | ||
| BSP603S2L .. | 신규 및 오리지널 | ||
| BSP603S2L H6327 | 신규 및 오리지널 | ||
| BSP603S2LGRN | 신규 및 오리지널 | ||
| BSP603S2LNT | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP605 | 신규 및 오리지널 | ||
| BSP60E6327 | Small Signal Bipolar Transisto | ||
| BSP60E6359 | 신규 및 오리지널 | ||
| BSP60H6327 | 신규 및 오리지널 | ||
| BSP603S2L | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS |