HGTG18N120BND

Mfr. #:: HGTG18N120BND
제조사:: ON Semiconductor
설명:: IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: HGTG18N120BND 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 페어차일드 반도체

제품 카테고리: IGBT - 싱글

시리즈: -

포장: 튜브

부분 별칭: HGTG18N120BND_NL

단위 무게: 0.225401 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-247-3

입력 유형: 기준

장착형: 구멍을 통해

공급자-장치-패키지: TO-247

구성: 하나의

파워맥스: 390W

역복구-시간-trr: 75ns

전류 수집기 Ic-Max: 54A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT형: NPT

전류 수집기 펄스 Icm: 160A

Vce-on-Max-Vge-Ic: 2.7V @ 15V, 18A

스위칭 에너지: 1.9mJ (on), 1.8mJ (off)

게이트 차지: 165nC

Td-on-off-25°C: 23ns/170ns

시험조건: 960V, 18A, 3 Ohm, 15V

Pd 전력 손실: 390 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

컬렉터-이미터-전압-VCEO-최대: 1200 V

컬렉터-이미터-포화-전압: 2.45 V

연속 수집기 전류 at-25-C: 54 A

게이트 이미 터 누설 전류: +/- 250 nA

최대 게이트 이미 터 전압: +/- 20 V

연속 수집기 전류 Ic-Max: 54 A

Tags: HGTG18N120BND, HGTG18N120B, HGTG18, HGTG1, HGTG, HGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG18N120BND 설명

***Components: In a Tube of 30, ON Semiconductor HGTG18N120BND IGBT, 54 A 1200 V, 3-Pin TO-247

***ical: Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG18N120BND Series 1200 V 54 A Flange Mount NPT N-Channel IGBT-TO-247

***inecomponents.com: 54A, 1200V, NPT Series N-Channel IGBTwith Anti-Parallel Hyperfast Diode

***i-Key: IGBT NPT N-CHAN 1200V 54A TO-247

***eco: ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ

***ser: IGBTs 36A, 1200V, N-Ch

***Semiconductor: IGBT, 1200V, NPT

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.45V; Power Dissipation, Pd:390W; Package/Case:TO-247; C-E Breakdown Voltage:1200V ;RoHS Compliant: Yes

***rchild Semiconductor: HGTG18N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***nell: IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:390W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:18A; Current, Icm Pulsed:160A; Device Marking:HGTG18N120BND; Power, Pd:390W; Time, Rise:22ns

***ment14 APAC: IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic @ Vce Sat:18A; Current Ic Continuous a Max:54A; Device Marking:HGTG18N120BND; Fall Time Max:140ns; Fall Time Typ:90ns; Package / Case:TO-247; Power Dissipation Max:390W; Power Dissipation Pd:390W; Power Dissipation Pd:390W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

Market price

부분 #	제조	설명	재고	가격
HGTG18N120BND DISTI # HGTG18N120BND-ND	ON Semiconductor	IGBT 1200V 54A 390W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	450In Stock	1350:$3.6624 900:$4.2050 450:$4.6119 10:$5.8330 1:$6.4600
HGTG18N120BND DISTI # HGTG18N120BND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BND) RoHS: Compliant Min Qty: 50 Container: Tube	Americas - 450
HGTG18N120BND DISTI # 58K8901	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8901) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$5.6400 900:$5.1600
HGTG18N120BND DISTI # 58K8901	ON Semiconductor	SINGLE IGBT, 1.2KV, 54A, TO-247,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:390W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	0	1:$7.7100 10:$7.0000 25:$6.6800 50:$6.2500 100:$5.8200 250:$5.5800 500:$5.1000
HGTG18N120BND DISTI # 97K1398	ON Semiconductor	IGBT Single Transistor, General Purpose, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes	0	1:$6.5500 10:$5.9500 25:$5.6800 50:$5.3300 100:$4.9700 250:$4.7600 500:$4.3600
HGTG18N120BND DISTI # 512-HGTG18N120BND	ON Semiconductor	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS: Compliant	436	1:$6.1500 10:$5.5600 25:$5.3000 100:$4.6000 250:$4.4000
HGTG18N120BND DISTI # 9034285P	ON Semiconductor	IGBT N-CH 1200V 54A NPT TO-247, TU	14	15:£4.6500 30:£4.4300 100:£3.8400 300:£3.6800
HGTG18N120BND DISTI # 9034285	ON Semiconductor	IGBT N-CH 1200V 54A NPT TO-247, EA	58	1:£5.1400 15:£4.6500 30:£4.4300 100:£3.8400 300:£3.6800
HGTG18N120BND	Fairchild Semiconductor Corporation	INSTOCK	62
HGTG18N120BND DISTI # 1095111	ON Semiconductor	IGBT, N, TO-247 RoHS: Compliant	9	1:$9.7400 10:$8.8000 25:$8.3900 100:$7.2800 250:$6.9700
HGTG18N120BND DISTI # 1095111	ON Semiconductor	IGBT, N, TO-247 RoHS: Compliant	757	1:£5.2700 5:£4.7800 10:£4.1300 50:£3.8600 100:£3.5800

영상	부분 #	설명
	Mfr.#: HGTG18N120BND OMO.#: OMO-HGTG18N120BND	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
	Mfr.#: HGTG18N120BN OMO.#: OMO-HGTG18N120BN	IGBT Transistors 54A 1200V N-Ch
	Mfr.#: HGTG18N120BND OMO.#: OMO-HGTG18N120BND-ON-SEMICONDUCTOR	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
	Mfr.#: HGTG18N120 OMO.#: OMO-HGTG18N120-1190	신규 및 오리지널
	Mfr.#: HGTG18N120BN OMO.#: OMO-HGTG18N120BN-ON-SEMICONDUCTOR	IGBT 1200V 54A 390W TO247
	Mfr.#: HGTG18N120BND,18N120BND OMO.#: OMO-HGTG18N120BND-18N120BND-1190	신규 및 오리지널
	Mfr.#: HGTG18N120BND,18N120BND, OMO.#: OMO-HGTG18N120BND-18N120BND--1190	신규 및 오리지널
	Mfr.#: HGTG18N120BND,18N120BND,18N120, OMO.#: OMO-HGTG18N120BND-18N120BND-18N120--1190	신규 및 오리지널
	Mfr.#: HGTG18N120BND-NL OMO.#: OMO-HGTG18N120BND-NL-1190	신규 및 오리지널
	Mfr.#: HGTG18N120BN G18N120BN OMO.#: OMO-HGTG18N120BN-G18N120BN-1190	신규 및 오리지널

HGTG18N120BND

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes