HGTG7N60A4D

HGTG7N60A4D
Mfr. #:
HGTG7N60A4D
제조사:
ON Semiconductor / Fairchild
설명:
IGBT Transistors 600V N-Ch IGBT SMPS Series HF
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
HGTG7N60A4D 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGTG7N60A4D DatasheetHGTG7N60A4D Datasheet (P4-P6)HGTG7N60A4D Datasheet (P7-P9)
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
IGBT 트랜지스터
RoHS:
E
기술:
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
수집기-이미터 포화 전압:
1.9 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
34 A
Pd - 전력 손실:
125 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
HGTG7N60A4D
포장:
튜브
연속 수집가 현재 IC 최대:
34 A
키:
20.82 mm
길이:
15.87 mm
너비:
4.82 mm
상표:
온세미컨덕터 / 페어차일드
지속적인 수집가 전류:
34 A
게이트-이미터 누설 전류:
+/- 250 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
450
하위 카테고리:
IGBT
단위 무게:
0.225401 oz
Tags
HGTG7N60A, HGTG7, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail
***ser
IGBTs 600V N-Ch IGBT SMPS Series HF
***pNet
Trans IGBT N-CH 600V 34A TO-247
***i-Key
IGBT N-CH SMPS 600V 34A TO247
***Semiconductor
600V, SMPS IGBT
***ark
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:34A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case ;RoHS Compliant: Yes
***rchild Semiconductor
The HGTP7N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:34A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:56A; No. of Pins:3; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:45ns; Time, Fall Typ:45ns; Time, Rise:11ns; Transistors, No. of:1
부분 # 제조 설명 재고 가격
HGTG7N60A4D
DISTI # V36:1790_06359157
ON SemiconductorPT P TO247 7A 600V SMPS205
  • 100:$1.8647
  • 25:$1.9941
  • 10:$2.2005
  • 1:$2.7163
HGTG7N60A4D
DISTI # HGTG7N60A4D-ND
ON SemiconductorIGBT 600V 34A 125W TO247
RoHS: Compliant
Min Qty: 450
Container: Tube
Limited Supply - Call
  • 450:$2.0895
HGTG7N60A4D
DISTI # 30204001
ON SemiconductorPT P TO247 7A 600V SMPS205
  • 6:$2.7163
HGTG7N60A4D
DISTI # HGTG7N60A4D
ON SemiconductorTrans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG7N60A4D)
RoHS: Not Compliant
Min Qty: 179
Container: Bulk
Americas - 0
  • 537:$1.6900
  • 895:$1.6900
  • 1790:$1.6900
  • 179:$1.7900
  • 358:$1.7900
HGTG7N60A4D
DISTI # HGTG7N60A4D
ON SemiconductorTrans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG7N60A4D)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 2700:$1.4900
  • 4500:$1.4900
  • 450:$1.5900
  • 900:$1.5900
  • 1800:$1.5900
HGTG7N60A4D
DISTI # 58K1595
ON SemiconductorSINGLE IGBT, 600V, 34A,DC Collector Current:34A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:125W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
  • 5000:$1.3000
  • 2500:$1.3400
  • 1000:$1.6600
  • 500:$1.8400
  • 100:$1.9900
  • 10:$2.4800
  • 1:$2.9200
HGTG7N60A4D
DISTI # 512-HGTG7N60A4D
ON SemiconductorIGBT Transistors 600V N-Ch IGBT SMPS Series HF
RoHS: Compliant
0
    HGTG7N60A4D_Q
    DISTI # 512-HGTG7N60A4D_Q
    ON SemiconductorMotor / Motion / Ignition Controllers & Drivers 600V N-Ch IGBT SMPS Series HF
    RoHS: Not compliant
    0
      HGTG7N60A4DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247
      RoHS: Compliant
      52
      • 1000:$1.8400
      • 500:$1.9400
      • 100:$2.0200
      • 25:$2.1100
      • 1:$2.2700
      HGTG7N60A4DHarris SemiconductorInsulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247
      RoHS: Compliant
      269
      • 1000:$1.8400
      • 500:$1.9400
      • 100:$2.0200
      • 25:$2.1100
      • 1:$2.2700
      영상 부분 # 설명
      HGTG7N60A4

      Mfr.#: HGTG7N60A4

      OMO.#: OMO-HGTG7N60A4

      IGBT Transistors 600V N-Channel IGBT SMPS Series
      HGTG7N60A4D

      Mfr.#: HGTG7N60A4D

      OMO.#: OMO-HGTG7N60A4D

      IGBT Transistors 600V N-Ch IGBT SMPS Series HF
      HGTG7N60A4

      Mfr.#: HGTG7N60A4

      OMO.#: OMO-HGTG7N60A4-ON-SEMICONDUCTOR

      IGBT 600V 34A 125W TO247
      HGTG7N60A4D

      Mfr.#: HGTG7N60A4D

      OMO.#: OMO-HGTG7N60A4D-ON-SEMICONDUCTOR

      IGBT 600V 34A 125W TO247
      HGTG7N60A4D,G7N60A4D

      Mfr.#: HGTG7N60A4D,G7N60A4D

      OMO.#: OMO-HGTG7N60A4D-G7N60A4D-1190

      신규 및 오리지널
      HGTG7N60B3

      Mfr.#: HGTG7N60B3

      OMO.#: OMO-HGTG7N60B3-1190

      신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      2000
      수량 입력:
      HGTG7N60A4D의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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