HGTG7N60A4 vs HGTG7N60A4D vs HGTG7N60A4D,G7N60A4D

 
PartNumberHGTG7N60A4HGTG7N60A4DHGTG7N60A4D,G7N60A4D
DescriptionIGBT Transistors 600V N-Channel IGBT SMPS SeriesIGBT Transistors 600V N-Ch IGBT SMPS Series HF
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSEE-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.9 V1.9 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C34 A34 A-
Pd Power Dissipation125 W125 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTubeTube-
Continuous Collector Current Ic Max34 A34 A-
Height20.82 mm20.82 mm-
Length15.87 mm15.87 mm-
Width4.82 mm4.82 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current34 A34 A-
Gate Emitter Leakage Current+/- 250 nA+/- 250 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity150450-
SubcategoryIGBTsIGBTs-
Unit Weight1.340411 oz0.225401 oz-
Series-HGTG7N60A4D-
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