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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SPD08N05L DISTI # SPD08N05L | Infineon Technologies AG | - Bulk (Alt: SPD08N05L) RoHS: Not Compliant Min Qty: 1924 Container: Bulk | Americas - 0 |
|
| SPD08N05L | Infineon Technologies AG | Power Field-Effect Transistor, 8.4A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant | 500 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SPD06N80C3BTMA1 OMO.#: OMO-SPD06N80C3BTMA1 |
MOSFET N-Ch 800V 6A DPAK-2 CoolMOS C3 |
|
Mfr.#: SPD08-100-L-RB-TR OMO.#: OMO-SPD08-100-L-RB-TR |
Standard Card Edge Connectors SPD08, 100P, w/Latch .76umAU |
|
Mfr.#: SPD02N50C3 |
IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3 |
|
Mfr.#: SPD0-4FB OMO.#: OMO-SPD0-4FB-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SPD01N60 OMO.#: OMO-SPD01N60-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SPD02U60C3 OMO.#: OMO-SPD02U60C3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SPD04N60C2 OMO.#: OMO-SPD04N60C2-1190 |
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
|
Mfr.#: SPD04P10PG OMO.#: OMO-SPD04P10PG-1190 |
Power Field-Effect Transistor, 4A I(D), 100V, 1000ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: SPD07N60S5BTMA1 OMO.#: OMO-SPD07N60S5BTMA1-1190 |
Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R - Bulk (Alt: SPD07N60S5BTMA1) |
|
|
Mfr.#: SPD08P05 OMO.#: OMO-SPD08P05-1190 |
8 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
