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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI4463BDY-T1-E3 DISTI # V72:2272_09216501 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R RoHS: Compliant | 1068 |
|
| SI4463BDY-T1-E3 DISTI # V36:1790_09216501 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R RoHS: Compliant | 0 | |
| SI4463BDY-T1-E3 DISTI # SI4463BDY-T1-E3CT-ND | Vishay Siliconix | MOSFET P-CH 20V 9.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 22896In Stock |
|
| SI4463BDY-T1-E3 DISTI # SI4463BDY-T1-E3DKR-ND | Vishay Siliconix | MOSFET P-CH 20V 9.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 22896In Stock |
|
| SI4463BDY-T1-E3 DISTI # SI4463BDY-T1-E3TR-ND | Vishay Siliconix | MOSFET P-CH 20V 9.8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 22500In Stock |
|
| SI4463BDY-T1-E3 DISTI # 8086809 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R RoHS: Compliant | 2500 |
|
| SI4463BDY-T1-E3 DISTI # 32445255 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R RoHS: Compliant | 1068 |
|
| SI4463BDY-T1-E3 DISTI # SI4463BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4463BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4463BDY-T1-E3 DISTI # 57J5674 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 57J5674) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack | Americas - 0 |
|
| SI4463BDY-T1-E3 DISTI # 57J5674 | Vishay Intertechnologies | P CHANNEL MOSFET, -20V, 13.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:13.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0085ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes | 9 |
|
| SI4463BDY-T1-E3. DISTI # 30AC0163 | Vishay Intertechnologies | Transistor Polarity:P Channel,Continuous Drain Current Id:9.8A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0085ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.4V,Power Dissipation Pd:1.5W,No. of Pins:8Pins RoHS Compliant: No | 0 |
|
| SI4463BDY-T1-E3 DISTI # 70026141 | Vishay Siliconix | MOSFET,P-Channel,-20 V,+ 12 V,0.009Ohms @ -4.5 V,-13 A,1.5 W @ degC RoHS: Compliant | 0 |
|
| SI4463BDY-T1-E3 DISTI # 781-SI4463BDY-T1-E3 | Vishay Intertechnologies | MOSFET 20V 13.7A 0.011Ohm RoHS: Compliant | 14895 |
|
| SI4463BDY-T1-E3 | Vishay Siliconix | 84 | ||
| SI4463BDY-T1-E3 | Vishay Intertechnologies | INTSTOCK | 2471 | |
| SI4463BDY-T1-E3 DISTI # 1497616 | Vishay Intertechnologies | MOSFET, P, SOIC RoHS: Compliant | 1786 |
|
| SI4463BDY-T1-E3 DISTI # 1497616RL | Vishay Intertechnologies | MOSFET, P, SOIC RoHS: Compliant | 0 |
|
| SI4463BDY-T1-E3 DISTI # 1497616 | Vishay Intertechnologies | MOSFET, P, SOIC RoHS: Compliant | 2196 |
|
| SI4463BDY-T1-E3 | Vishay Intertechnologies | MOSFET 20V 13.7A 0.011Ohm | Americas - 2500 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI4463BDY-T1-E3 OMO.#: OMO-SI4463BDY-T1-E3 |
MOSFET 20V 13.7A 0.011Ohm |
|
|
Mfr.#: SI4463BDY-T1-GE3 OMO.#: OMO-SI4463BDY-T1-GE3 |
MOSFET 20V 13.7A 3.0W 11mohm @ 10V |
|
Mfr.#: SI4463BDY-T1-GE3 OMO.#: OMO-SI4463BDY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 20V 13.7A 3.0W 11mohm @ 10V |
|
Mfr.#: SI4463BDY-T1-E3-CUT TAPE |
신규 및 오리지널 |
|
|
Mfr.#: SI4463BDY-T1-E3 OMO.#: OMO-SI4463BDY-T1-E3-VISHAY |
MOSFET P-CH 20V 9.8A 8-SOIC |
|
|
Mfr.#: SI4463BDY-T1-EJ OMO.#: OMO-SI4463BDY-T1-EJ-1190 |
신규 및 오리지널 |