SI4463BDY-T1-GE3

SI4463BDY-T1-GE3
Mfr. #:
SI4463BDY-T1-GE3
제조사:
Vishay
설명:
RF Bipolar Transistors MOSFET 20V 13.7A 3.0W 11mohm @ 10V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI4463BDY-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SI4463BDY-T1-GE3 추가 정보
제품 속성
속성 값
제조사
비쉐이
제품 카테고리
IC 칩
Tags
SI4463BD, SI4463B, SI4463, SI446, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
P CHANNEL MOSFET, -20V, 13.7A, SOIC
***et
Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R
***ment14 APAC
P CHANNEL MOSFET, -20V, 13.7A, SOIC; Tra; P CHANNEL MOSFET, -20V, 13.7A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:13.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-2.5V; Threshold Voltage Vgs Typ:-1.4V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
부분 # 제조 설명 재고 가격
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2490In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2490In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.6554
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R (Alt: SI4463BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4463BDY-T1-GE3
    DISTI # SI4463BDY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4463BDY-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.6559
    • 5000:$0.6539
    • 10000:$0.6519
    • 15000:$0.6499
    • 25000:$0.6479
    SI4463BDY-T1-GE3
    DISTI # 26R1879
    Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 13.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:13.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-2.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
    • 1:$1.5800
    • 10:$1.3100
    • 25:$1.2100
    • 50:$1.1200
    • 100:$1.0200
    • 250:$0.9530
    • 500:$0.8850
    SI4463BDY-T1-GE3
    DISTI # 15R5028
    Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 13.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:13.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-2.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
    • 1:$0.9580
    • 1000:$0.9010
    • 2000:$0.8550
    • 4000:$0.7700
    • 6000:$0.7410
    • 10000:$0.7130
    SI4463BDY-T1-GE3
    DISTI # 781-SI4463BDY-GE3
    Vishay IntertechnologiesMOSFET 20V 13.7A 3.0W 11mohm @ 10V
    RoHS: Compliant
    2429
    • 1:$1.5800
    • 10:$1.3100
    • 100:$1.0200
    • 500:$0.8850
    • 1000:$0.7340
    • 2500:$0.6830
    영상 부분 # 설명
    SI4463BDY-T1-E3

    Mfr.#: SI4463BDY-T1-E3

    OMO.#: OMO-SI4463BDY-T1-E3

    MOSFET 20V 13.7A 0.011Ohm
    SI4463BDY-T1-GE3

    Mfr.#: SI4463BDY-T1-GE3

    OMO.#: OMO-SI4463BDY-T1-GE3

    MOSFET 20V 13.7A 3.0W 11mohm @ 10V
    SI4463BDY-T1-GE3

    Mfr.#: SI4463BDY-T1-GE3

    OMO.#: OMO-SI4463BDY-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 13.7A 3.0W 11mohm @ 10V
    SI4463BDY-T1-E3-CUT TAPE

    Mfr.#: SI4463BDY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4463BDY-T1-E3-CUT-TAPE-1190

    신규 및 오리지널
    SI4463BDY-T1-E3

    Mfr.#: SI4463BDY-T1-E3

    OMO.#: OMO-SI4463BDY-T1-E3-VISHAY

    MOSFET P-CH 20V 9.8A 8-SOIC
    SI4463BDY-T1-EJ

    Mfr.#: SI4463BDY-T1-EJ

    OMO.#: OMO-SI4463BDY-T1-EJ-1190

    신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    1500
    수량 입력:
    SI4463BDY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.97
    US$0.97
    10
    US$0.92
    US$9.23
    100
    US$0.87
    US$87.47
    500
    US$0.83
    US$413.05
    1000
    US$0.78
    US$777.50
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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